Study of effect of inserted pentacene layer in ITO/P(VDF-TrFE)/α-NPD/Au capacitor using electric-field-induced optical second-harmonic generation and displacement current

Cui, Xiaojin; Taguchi, Dai; Manaka, Takaaki; Pan, Wei; Iwamoto, Mitsumasa

doi:10.1016/j.orgel.2013.12.008

Cited by 5 publications

(6 citation statements)

References 23 publications

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“…The typical results from the DCM experiment can be found in Figure a, where two current peaks can be clearly observed from the I – V curve. (The voltage amplitude V m is 40 V.) As can be seen in Equation , the current peak in Figure a was caused by the switching (turn‐over) of the dipole moment in P(VDF‐TrFE) . In Figure a, two peaks were generated at 15.8 V in the process 0 → V m and at −15.8 V in the process 0 → − V m .…”

Section: Resultsmentioning

confidence: 90%

“…The dipolar turn‐over occurred when the electric field across the P(VDF‐TrFE) layer reached the coercive field E c = 0.4 MV cm −1 . Briefly, the DCM in our case can be given as

I = (C \frac{\partial V}{\partial t} + \frac{\partial P}{\partial t}) S

…”

Section: Resultsmentioning

confidence: 97%

“…On the other hand, polymer Poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) is a kind of ferroelectric material that has been widely studied for organic memory devices, where two different orientations of dipole moments (up and down) can be briefly considered as “0” and “1” signal for computation and information storage. The dipole moment in P(VDF‐TrFE) also can modulate the distribution of local electric field in the organic active layer, which makes a great contribution to enhance charge separation and transport in the organic electronics devices .…”

Section: Introductionmentioning

confidence: 99%

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Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity

Chen

Iwamoto

Shi

et al. 2014

Adv Funct Materials

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739wileyonlinelibrary.com collection, wind energy gathering, and so on. [3][4][5] Meanwhile, by utilizing the universal availability of tribo-electricity, this energy generation technique was also applied for designing various self-powered sensor devices, such as motion detectors, skin sensor, liquid sensor, and so on. [6][7][8] Generally speaking, the mainstreams of the research for TENG are developing into two paths. One is related to the enhancement of the power generation from TENG. [ 9,10 ] A common characteristic of the TENG is a high output voltage (hundreds of volts) but low output current. It is therefore necessary to increase charge separation cycles within the limited time in order to improve the charge transfer rate through the devices, which is the current. In addition to high effi ciency, another research direction of TENG is to enrich its functionality as self-powered devices. As a result, a series of sensor devices as well as several hybrid power systems based on the concept of tribo-electrifi cation are designed and applied for various purposes. [ 11,12 ] Consequently, in order to further popularize the practical utilization of TENG as a low-cost and sustainable new energy technology, it is quite necessary to keep developing some novel and functional applications for TENG technique.On the other hand, polymer Poly(vinylidene fl uoride-trifluoroethylene) (P(VDF-TrFE)) [13][14][15] is a kind of ferroelectric material that has been widely studied for organic memory devices, where two different orientations of dipole moments (up and down) can be briefl y considered as "0" and "1" signal for computation and information storage. The dipole moment in P(VDF-TrFE) also can modulate the distribution of local electric fi eld in the organic active layer, which makes a great contribution to enhance charge separation and transport in the organic electronics devices. [ 16,17 ] The spontaneous polarization of the P(VDF-TrFE) is very sensitive to the applied electric fi eld and less depending on the conduction current, which is very suitable for the TENG's output characteristic of high voltage and low current. Meanwhile, the dipole switching time of such materials is less than millisecond, which is also compatible for the motion of TENG. Furthermore, it has been found that the ferroelectric performance of P(VDF-TrFE) remains unchanged until for more than 1 × 10 7 times of switching, [ 18 ] which confi rmed the repeatability of the dipole switching and the possibility of using this material for some real applications in the fi eld of memory devices. All these facts inspired us to Self-Powered Trace Memorization by Conjunction of Contact-Electrifi cation and FerroelectricityXiangyu Chen , Mitsumasa Iwamoto , Zhemin Shi , Limin Zhang , and Zhong Lin Wang * Triboelectric nanogenerator (TENG) is a newly invented technology that can effectively harvest ambient mechanical energy from various motions with promising applications in portable electronics, self-powered sensor networks, etc. Here, by coupling TENG and a thin f...

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Section: Resultsmentioning

confidence: 90%

“…The dipolar turn‐over occurred when the electric field across the P(VDF‐TrFE) layer reached the coercive field E c = 0.4 MV cm −1 . Briefly, the DCM in our case can be given as

I = (C \frac{\partial V}{\partial t} + \frac{\partial P}{\partial t}) S

…”

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity

Chen

Iwamoto

Shi

et al. 2014

Adv Funct Materials

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“…These studies are mainly carried out by means of electrical measurements such as displacement current measurement (DCM) using ramp voltage [150,151], but these are no longer sufficient to account for carrier behaviors in a variety of organic semiconductor devices being utilized with ferroelectric P(VDF-TrFE) layers. Using EFISHG probes the electric field change induced in organic devices with a ferro-electric layer gives much information on the carrier behavior in these devices [152][153][154]. Figure 16 shows a typical example of DCM measurements for MFM and MFSM (the inset of Fig.…”

Section: A Double Layer El Diodesmentioning

confidence: 99%

Modeling and visualization of carrier motion in organic films by optical second harmonic generation and Maxwell-displacement current

Iwamoto¹,

Manaka²,

Taguchi³

2015

J. Phys. D: Appl. Phys.

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Probing and modeling of carrier motions in materials as well as in electronic devices is a fundamental research subject in science and electronics. According to the Maxwell electromagnetic field theory, carriers are a source of electric field. Therefore, by probing dielectric polarization caused by the electric field arising from moving carriers and dipoles, we can find a way to visualize the carrier motions in materials and in devices. The techniques used here are an electrical Maxwell-displacement current (MDC) measurement and a novel optical method based on electric field induced optical second harmonic generation (EFISHG) measurement. The MDC measurement probes changes of induced charge on electrodes, while the EFISHG probes nonlinear polarization induced in organic active layers due to coupling of electron clouds of molecules and electromagnetic waves of incident laser beam in the presence of dc field caused from electrons and holes. Both measurements allow us to probe dynamical carrier motions in solids through detection of dielectric polarization phenomena originated from dipolar motions and electron transport. In this Topical review, on the basis of the Maxwell's electro-magnetism theory in 1873, which stems from the Faraday's idea, the concept for probing electron and hole transport in solids by using the EFISHG is discussed in comparison with the conventional time of flight (TOF) measurement. We then visualize carrier transit in organic devices, i.e., organic field effect transistors, organic light emitting diodes, organic solar cells, and others. We also show that visualizing EFISHG microscopic image is a novel way for characterizing the anisotropic carrier transport in organic thin films. We also discuss the concept of the detection of rotational dipolar motions in monolayers by means of the MDC measurement, which is capable of probing the change of dielectric spontaneous polarization formed by dipoles in organic monolayers. Finally we conclude that ideas and experiments on EFISHG and MDC lead to a novel way for analyzing dynamical motions of electrons, holes, and dipoles in solids, thus these are available in organic electronic device application. to Eq. (1), we obtain the following equation:

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“…We therefore have been developing a method of electric-field-induced optical second-harmonic generation (EFISHG) measurement that can probe carrier behavior in a selected layer of organic multilayer systems [6,23]. In our previous study, by combining the DCM with EFISHG measurement we discussed the interaction of interfacial charges and ferroelectric polarization in MFS diodes [24][25][26]. Results showed that accumulated charges at the interface make a significant contribution to the polarization reversal of the ferroelectric layer, and the presence of different polarization reversal processes was found, depending on experimental procedures, e.g., under illumination and in dark [27].…”

Section: Introductionmentioning

confidence: 99%

Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

Otsuka

Taguchi

Manaka

et al. 2017

Journal of Applied Physics

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By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics, and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diode.

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Study of effect of inserted pentacene layer in ITO/P(VDF-TrFE)/α-NPD/Au capacitor using electric-field-induced optical second-harmonic generation and displacement current

Cited by 5 publications

References 23 publications

Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity

Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity

Modeling and visualization of carrier motion in organic films by optical second harmonic generation and Maxwell-displacement current

Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

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