2012
DOI: 10.7498/aps.61.077302
|View full text |Cite
|
Sign up to set email alerts
|

Study of electron density of nanostructure metal Tm

Abstract: Electron density is an important parameter for the macroscopic properties of metal. The reflectance spectrum measurement and the Hall Effect measurement are basic experiments for obtaining electron density and carrier density. Two samples (sample 1:100 nm, sample 2:10 nm) of nanostructure block rare earth metal Tm are studied. Their reflectivity spectra show that the surface reflection of Tm metal possess metallic optical properties in a region of infrared-ultraviolet, the electronic densities np of 6s band ar… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
1
0
1

Year Published

2014
2014
2021
2021

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 5 publications
0
1
0
1
Order By: Relevance
“…One may note that k F is one of the most important parameters to tune the oscillation of the RKKY interaction. In our simulation, a smaller k F = 2π/1.243 in units of a −1 than that in Tm is chosen due to the fact that the free-electron density of TmB 4 is lower than that of Tm [25]. Naturally, we also simulate the model with other values of k F in order to examine the stability of the spin orders.…”
Section: Model and Method -The Hamiltonian Can Be Written Asmentioning
confidence: 99%
“…One may note that k F is one of the most important parameters to tune the oscillation of the RKKY interaction. In our simulation, a smaller k F = 2π/1.243 in units of a −1 than that in Tm is chosen due to the fact that the free-electron density of TmB 4 is lower than that of Tm [25]. Naturally, we also simulate the model with other values of k F in order to examine the stability of the spin orders.…”
Section: Model and Method -The Hamiltonian Can Be Written Asmentioning
confidence: 99%
“…然而, 由于 本征的零带隙以及过高的电子浓度, 无法直接通过栅 极调控金属中电子输运的通断 [18] . 为了解决这一问题, 18 -10 20 cm −3 [19] . 为了提高其载流子浓度 [20] , 而21世纪初提出对金属性碳纳米管施加非对称电场以 及采用金属纳米团簇阵列等策略 [21][22][23] , 均是为了达成 这一目标.…”
Section: 这些都成为制约半导体器件进一步发展的瓶颈unclassified