2017
DOI: 10.1002/pssc.201700136
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Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon

Abstract: In this paper, the deep levels found by Deep‐Level Transient Spectroscopy in Si‐O superlattices (SLs) on n‐type silicon are reported. Samples have been grown with one, two or five silicon‐oxygen layers, separated by 3 nm of silicon. A Cr Schottky barrier (SB) is thermally evaporated on top of the SL. Similar as for p‐type silicon, no deep levels have been found for a bias pulse in depletion, while a broad distribution of electron traps shows up when pulsing into forward bias. At the same time, these bands are … Show more

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