Study of electronic and optical properties of boron arsenide

Lalngaihawmi, Rebecca; Vanlalruata, Benjamin; Hnamte, Lalhriatpuia; Thapa, R. K.

doi:10.1109/iceeot.2016.7754867

2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) 2016

DOI: 10.1109/iceeot.2016.7754867

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Study of electronic and optical properties of boron arsenide

Rebecca Lalngaihawmi

Benjamin Vanlalruata²,

Lalhriatpuia Hnamte

et al.

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2019

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“…The refractive index (n) is a key dimensionless parameter for photonic applications that describes how fast light propagates through the material, but was unknown for BAs so far. Theoretical refractive indexes of BAs appearing in recent literature have different values, possibly due to variations in pseudopotentials 28,30,32 or empirical relationships 33 . Here, we directly measured n by Fabry-Perot interference.…”

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Basic physical properties of cubic boron arsenide

Kang

et al. 2019

Applied Physics Letters

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Cubic boron arsenide (BAs) is an emerging semiconductor material with a record-high thermal conductivity subject to intensive research interest for its applications in electronics thermal management. However, many fundamental properties of BAs remain unexplored experimentally since high-quality BAs single crystals have only been obtained very recently. Here, we report the systematic experimental measurements of important physical properties of BAs, including the band gap, optical refractive index, elastic modulus, shear modulus, Poisson's ratio, thermal expansion coefficient, and heat capacity. In particular, light absorption and Fabry-Perot interference were used to measure an optical band gap of 1.82 eV and a refractive index of 3.29 (657 nm) at room temperature.A picoultrasonics method, based on ultrafast optical pump probe spectroscopy, was used to measure a high elastic modulus of 326 GPa, which is twice that of silicon. Furthermore, temperature-dependent X-ray diffraction was used to measure a linear thermal expansion coefficient of 3.85 × 10 -6 K -1 ; this value is very close to prototyped semiconductors such as GaN, which underscores the promise of BAs for cooling high power and high frequency electronics. We also performed ab initio theory calculations and observed good agreement between the experimental and theoretical results. Importantly, this work aims to build a database (Table 1) for the basic physical properties of BAs with the expectation that this semiconductor will inspire broad research and applications in electronics, photonics, and mechanics.

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Basic physical properties of cubic boron arsenide

Kang

et al. 2019

Applied Physics Letters

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Study of electronic and optical properties of boron arsenide

Cited by 1 publication

References 30 publications

Basic physical properties of cubic boron arsenide

Basic physical properties of cubic boron arsenide

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