Study of EUV mask defect repair using FIB method

Amano, Tsuyoshi; Takagi, Noriaki; Shigemura, Hiroyuki; Terasawa, Tsuneo; Suga, Osamu; Shiina, Kensuke; Aramaki, Fumio; Yasaka, Anto; Inazuki, Yuichi; Hayashi, Naoya

doi:10.1117/12.864213

Cited by 5 publications

(4 citation statements)

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“…In EUV lithography, the EUV mask is a reflective type mask, which is different from the transparent type mask used for conventional 193 nm lithography. 10,11 The LBNL group has developed an actinic imaging tool (AIT) using a Fresnel zone plate as an optical component. A phase structure such as a bump or pit on the substrate or particles in the multilayers could be printable as a defect.…”

Section: Introductionmentioning

confidence: 99%

Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging

Harada

Nakasuji

Kimura

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inPhase defect characterization on an extreme-ultraviolet blank mask using microcoherent extreme-ultraviolet scatterometry microscopeIn extreme-ultraviolet (EUV) lithography, defect-free mask production is a critical issue for highvolume manufacturing. For mask inspection and metrology, we have developed a coherent EUV scatterometry microscope (CSM). It is a simple lensless system. An aerial image of the mask pattern is reconstructed with iterative calculation based on coherent diffraction imaging. Periodic patterns, aperiodic patterns, and phase structures were reconstructed well by the CSM. A defect in a line-and-space pattern was detected as a diffraction signal. The aerial image of the defect is also reconstructed. This paper demonstrates the capability of the CSM to observe complex diffraction amplitudes directly from the pattern and the defect.

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Section: Introductionmentioning

confidence: 99%

Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging

Harada

Nakasuji

Kimura

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Issues with insufficient light-source power, particlefree mask handling, defect-free mask, availability of flat mask blanks, [1][2][3][4][5] and resist material development 6,7 are some of those difficulties that need to be resolved. From the viewpoint of EUV mask fabrication, mask pattern defect inspection [8][9][10] and repair [11][12][13] are some of the even more demanding tasks to be addressed. The reason is that for the EUV lithography generation, the device pattern feature size happens to be exceedingly small and calls for higher repairing accuracy than what has been achieved for optical lithography.…”

Section: Introductionmentioning

confidence: 99%

Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope

Amano¹,

Terasawa²,

Watanabe³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Influences of phase defect structures on extreme ultraviolet (EUV) microscope images were examined. Phase defects on the bottom of a multilayer (ML) do not always propagate vertically upward to the ML's top surface. For this study, two types of masks were prepared. One was an EUV blank with programmed phase defects made of lines in order to analyze the inclination angle of the phase defects. The other was an EUV mask that consists of programmed dot type phase defects 80 nm wide and 2.4 nm high with absorber patterns of halfpitch 88-nm lines-and-spaces. The positions of the phase defects relative to the absorber lines were designed to be shifted accordingly. Transmission electron microscope observations revealed that the line type phase defects starting from the bottom surface of the ML propagated toward the ML's top surface, while inclined toward the center of the EUV blank. At the distances of 0 and 66 mm from the center of the EUV blank, the inclination angles varied from 0 to 4 deg. The impacts of the inclination angles on EUV microscope images were significant even though the positions of the phase defect relative to the absorber line, as measured by a scanning probe microscope, were the same. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…For example, a lack of sufficient light-source power, particle-free mask handling, defect-free and flat mask blanks, [1][2][3][4][5] and resist material development 6,7 all need to be addressed. From the viewpoint of EUV mask fabrication, mask pattern defect inspection [8][9][10][11] and repair [12][13][14] are some of the most demanding tasks to be dealt with. The reason is that for EUVL generation, the device pattern feature size happens to be exceedingly small and calls for a higher repairing accuracy than would be required in optical lithography.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

Amano¹,

Abe

2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Predicting the lithography impact of a phase defect embedded in a mask used for extreme ultraviolet lithography on the printed image on wafer is a challenging task. In this study, two types of measurement tools were employed to characterize the phase defects. The prior measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the second was an at-wavelength darkfield inspection tool capable of capturing a phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on the printed image on a wafer was also calculated using a lithography simulator. The simulation results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Study of EUV mask defect repair using FIB method

Cited by 5 publications

References 0 publications

Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging

Imaging of extreme-ultraviolet mask patterns using coherent extreme-ultraviolet scatterometry microscope based on coherent diffraction imaging

Observation of phase defect on extreme ultraviolet mask using an extreme ultraviolet microscope

Measurement of the phase defect size using a scanning probe microscope and at-wavelength inspection tool

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