2015
DOI: 10.1016/j.engfracmech.2015.02.020
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Study of fatigue failure in Al-chip-metallization during power cycling

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Cited by 10 publications
(1 citation statement)
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“…The corresponding reduction in the effective cross-sectional area of the layer significantly increases the resistance of the entire Al metallization layer, causing the voltage between the IGBT collector and emitter to rise and hotspots to appear in some regions. The effective connection area of wire bonding is also decreased, and the peeling or cracking of the Al bonding wires is accelerated, resulting in the failure of the IGBT module [3,4]. Therefore, studying the evolution mechanism of the surface morphology of the Al metallization layer is crucial for optimizing and improving the operational reliability of IGBT modules.…”
Section: Introductionmentioning
confidence: 99%
“…The corresponding reduction in the effective cross-sectional area of the layer significantly increases the resistance of the entire Al metallization layer, causing the voltage between the IGBT collector and emitter to rise and hotspots to appear in some regions. The effective connection area of wire bonding is also decreased, and the peeling or cracking of the Al bonding wires is accelerated, resulting in the failure of the IGBT module [3,4]. Therefore, studying the evolution mechanism of the surface morphology of the Al metallization layer is crucial for optimizing and improving the operational reliability of IGBT modules.…”
Section: Introductionmentioning
confidence: 99%