Three well-defined two-dimensional (2D) Al overlayers including the Al/Si(111) α-phase with Al coverage
of ∼0.25 ML, the Al/Si(111) γ-phase with Al coverage of ∼0.8 ML, and the bulk Al film with Al coverage
of 16 ML on Si(111) have been prepared using the molecular beam epitaxy technique. Their surface morphology
and electronic structure were characterized by scanning tunneling microscopy (STM), X-ray photoelectron
spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). The 16 ML Al film presents the metallic
Al character, while the nanostructured Al/Si(111) α-phase and γ-phase are semiconducting due to space
confinement of the surface Al atoms. The interfacial Al−Si interaction results in electron deficiency in surface
Al atoms which follows the order of Al/Si(111) α-phase > Al/Si(111) γ-phase > bulk Al film. Methanol
dissociation reactions on the Al surfaces at room temperature were studied by XPS and high-resolution electron
energy loss spectroscopy (HREELS). The Al/Si(111) α-phase presents the highest activity for the dissociation
of CH3OH and CH3Oads and the lowest activity for the bulk Al film. The exceptional activity of the
nanostructured 2D Al surfaces for O−H and C−O bond scission has been attributed to their unique geometric
structures as well as their semiconducting and electron-deficient characters.