Study of Formation and Decay of Rare-Gas Excimers by Laser- Induced Fluorescence

Marchal, Frédéric; Sewraj, Neermalsing; Gardou, Jean-Pierre; NofelMerbahi,; Yousfi, Mohammed

doi:10.5772/intechopen.71942

Cited by 2 publications

(4 citation statements)

References 37 publications

(37 reference statements)

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“…The shape of the atomic oxygen density exhibits a maximum at the plasma axis and is followed by a decrease along the radial direction. This is coherent with the previous gas temperature measurements [8] . These rotational temperatures are determined from the comparisons between measured OH(A-X) spectra and the calculated OH(A-X) using LIFBASE software [9] .…”

Section: Talif Measurementssupporting

confidence: 93%

“…It is also interesting to underline another measurement [7] of the absolute density of the ground state of atomic oxygen based on a visible cavity-enhanced absorption spectroscopy in the case of the lower pressure plasma generated by an ICP (induced capacitive plasma) reactor. However, TALIF measurements of the density of the ground state atomic oxygen in the present hot air plasma are quasi-inexistent in the literature [8] .…”

Section: Introductionmentioning

confidence: 90%

“…The unknown density of atomic oxygen n O is then derived from the known xenon gas density n Xe and the ratio S 0 /S Xe of normalized and integrated TALIF signals measured for xenon and oxygen in the plasma column. The ground state atomic oxygen density is then determined from the following relation [1,8] :…”

Section: Talif Measurementsmentioning

confidence: 99%

“…Air plasma column inside the gas-conditioning cell for PMW=1 kW, Air gas flow=12 L/min and pres-sure=600 mbar taken from Ref [8]. (nozzle: z=0 mm and z=63 mm for the top)2 TALIF measurements…”

mentioning

confidence: 99%

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Quantitative Determination of Density of Ground State Atomic Oxygen from Both TALIF and Emission Spectroscopy in Hot Air Plasma Generated by Microwave Resonant Cavity

Marchal

Yousfi

Merbahi

et al. 2016

Plasma Sci. Technol.

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Two experimental techniques have been used to quantify the atomic oxygen density in the case of hot air plasma generated by a microwave (MW) resonant cavity. The latter operates at a frequency of 2.45 GHz inside a cell of gas conditioning at a pressure of 600 mbar, an injected air flow of 12 L/min and an input MW power of 1 kW. The first technique is based on the standard two photon absorption laser induced fluorescence (TALIF) using xenon for calibration but applied for the first time in the present post discharge hot air plasma column having a temperature of about 4500 K near the axis of the nozzle. The second diagnostic technique is an actinometry method based on optical emission spectroscopy (OES). In this case, we compared the spectra intensities of a specific atomic oxygen line (844 nm) and the closest wavelength xenon line (823 nm). The two lines need to be collected under absolutely the same spectroscopic parameters. The xenon emission is due to the addition of a small proportion of xenon (1% Xe) of this chemically inert gas inside the air while a further small quantity of H2 (2%) is also added in the mixture in order to collect OH(A-X) and NH(A-X) spectra without noise. The latter molecular spectra are required to estimate gas and excitation temperatures. Optical emission spectroscopy measurements, at for instance the position z=12 mm on the axis plasma column that leads to a gas measured temperature equal to 3500 K, an excitation temperature of about 9500 K and an atomic oxygen density 2.09×10 17 ± 0.2×10 17 cm −3. This is in very good agreement with the TALIF measurement, which is equal to 2.0×10 17 cm −3 .

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Section: Talif Measurementssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 90%

Section: Talif Measurementsmentioning

confidence: 99%

mentioning

confidence: 99%

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Quantitative Determination of Density of Ground State Atomic Oxygen from Both TALIF and Emission Spectroscopy in Hot Air Plasma Generated by Microwave Resonant Cavity

Marchal

Yousfi

Merbahi

et al. 2016

Plasma Sci. Technol.

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Report on laser-induced fluorescence transitions relevant for the microelectronics industry and sustainability applications

Kondeti,

Yatom,

Romadanov

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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A wide variety of feed gases are used to generate low-temperature plasmas for the microelectronics and sustainability applications. These plasmas often have a complex combination of reactive and nonreactive species which may have spatial and temporal variations in density, temperature, and energy. Accurate knowledge of these parameters and their variations is critically important for understanding and advancing these applications through validated and predictive modeling and the design of relevant devices. Laser-induced fluorescence (LIF) provides both spatial and temporally resolved information about the plasma-produced radicals, ions, and metastables. However, the use of this powerful diagnostic tool requires the knowledge of optical transitions including excitation and fluorescence wavelengths which may not be available or scattered through a huge literature domain. In this paper, we collected, analyzed, and compiled the available transitions for laser-induced fluorescence for more than 160 chemical species relevant to the microelectronics industry and the sustainability applications. A list of species with overlapping LIF excitations and fluorescence wavelengths have been identified. This summary is intended to serve as a data reference for LIF transitions and should be updated in the future.

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Study of Formation and Decay of Rare-Gas Excimers by Laser- Induced Fluorescence

Cited by 2 publications

References 37 publications

Quantitative Determination of Density of Ground State Atomic Oxygen from Both TALIF and Emission Spectroscopy in Hot Air Plasma Generated by Microwave Resonant Cavity

Quantitative Determination of Density of Ground State Atomic Oxygen from Both TALIF and Emission Spectroscopy in Hot Air Plasma Generated by Microwave Resonant Cavity

Report on laser-induced fluorescence transitions relevant for the microelectronics industry and sustainability applications

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