Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques

Abstract

A new type of high-temperature attachment was constructed to make precise measurement by Bond's method on lattice parameters of relatively large single crystals. This attachment is capable of tilting and traversing of a single crystal specimen in a vacuum or inert gas atmosphere in the outer metal cover at any time during the operation of the furnace. Special attention was given to the exact determination of specimen temperature in a wide range from room temperature up to 1500 K . The temperature is kept constant to within i O . 5 K during measurement in the above range. The accuracy of specimen temperature determination is i 1.6 K at 1000 K and i 2 . 3 K at 1500 K. With a nearly perfect single Si crystal we measured lattice parameters at room temperature. 1300 and 1400 K to a few parts per million.