Study of gain compression mechanisms in multiple-quantum-well In/sub 1-x/Ga/sub x/As semiconductor optical amplifiers

Reale, Andrea; Carlo, Aldo Di; Campi, D.; Cacciatore, C.; Stano, A.; Fornuto, G.

doi:10.1109/3.798094

Cited by 23 publications

(9 citation statements)

References 36 publications

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“…Carrier-transport effects have been shown, theoretically and experimentally, to reduce the bandwidths of QW lasers by reducing the effective differential gain rather than by enhancing the gain-compression coefficient [54,[63][64][65]. Unlike bulk lasers, QW lasers commonly have very small active regions.…”

Section: Quantum-well Lasers and Carrier-transport Effectsmentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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Although diode lasers are almost ideal sources for ultrahigh-speed data communication systems, system performance remains critically dependent on the quality of the optical pulses that they generate. Uniquely among lasers, the output power can be modulated directly by modulating the diode current. However, this leads to relaxation oscillations and a roll-off at high frequencies that is superimposed on the frequency response of the drive circuit. This is limited by parasitics and maximum modulation frequencies range from 1 to 70 GHz, depending on the type of laser and its packaging. The higher values are obtained with short cavity lengths and tight optical confinement, the highest frequencies being achieved in vertical-cavity devices. Modulation bandwidth is usually limited by circuit parasitics, device heating and the maximum power-handling capability of the laser facets.The generation of picosecond and femtosecond pulses demands special techniques and three-gain switching, Q-switching and mode locking-are discussed in detail, with their relative advantages and disadvantages compared. Very short pulses inherently contain a significant spread of wavelengths and their generation requires the optical gain in the laser medium to extend across that wavelength range. While diode lasers satisfy this criterion better than many other types, the effect of gain non-linearities and carrier-transport effects prevent the Fourier-transform limit from being achieved in practice. As a result, external pulse-compression techniques, which exploit the detailed temporal and spectral properties of the laser pulses, such as frequency chirping, self-phase modulation and group velocity dispersion, are becoming more important, and diode lasers are increasingly challenged as primary sources by compact, efficient, diode-pumped solid-state lasers.The paper summarizes the levels of maximum pulse power and minimum duration that have been achieved using the various techniques.

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Section: Quantum-well Lasers and Carrier-transport Effectsmentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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“…The inter-well time constant models two concurrent processes [17]: tunneling through the barriers on one side and thermionic emission plus transport along the barriers with subsequent capture in the adjacent QW on the other. Without tunneling the inter-well transition time is a sum of escape time from one QW and capture time to other QW.…”

Section: Carrier Dynamicsmentioning

confidence: 99%

“…G is the optical gain, which will be described in (22). The spontaneous recombination rates in the SCH and QWs are given by the following equations [17]:…”

Section: Carrier Dynamicsmentioning

confidence: 99%

Ultrafast dynamics in asymmetrical multiple quantum well SOAs

Лысак¹,

Kawaguchi²,

Sukhoivanov³

et al. 2004

Physics and Applications of Optoelectronic Devices

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A numerical model for the investigation of the ultrafast gain properties in asymmetrical multiple quantum-well semiconductor optical amplifiers (AMQW SOAs) has been developed considering propagation of ultrashort optical pulses with different wavelengths. The dynamics of the number of carriers and carrier temperature are investigated for each quantum well. The results agree with the experimental results of pump probe measurements with different wavelengths. It is shown that gain recovery is slower for higher energy wells for pump signals of all wavelengths.

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“…When coherent phenomena can be neglected (see e.g. [30][31]), the mean electron density Ni of each layer as [32]:…”

Section: Rate Question Model For Soasmentioning

confidence: 99%

Simulation of Optoelectronic Devices

Lugli¹,

Compagnone

Carlo

et al. 2001

VLSI Design

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In the spirit of reviewing various approaches to the modeling and simulation of optoelectronic devices, we discuss two specific examples, related respectively to Semiconductor Optical Amplifiers and to Quantum Cascade Lasers. In the former case, a tight-binding analysis is performed aimed at the optimization of the polarization independence of the device. Further, a rate-equation model is set up to describe the dynamics of gain recovery after optical pumping. A Monte Carlo simulation of a superlattice quantum cascade laser is then presented which provides an insight into the microscopic processes controlling the performance of this device.

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Study of gain compression mechanisms in multiple-quantum-well In/sub 1-x/Ga/sub x/As semiconductor optical amplifiers

Cited by 23 publications

References 36 publications

Fast phenomena in semiconductor lasers

Fast phenomena in semiconductor lasers

Ultrafast dynamics in asymmetrical multiple quantum well SOAs

Simulation of Optoelectronic Devices

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