Study of Gaussian distribution of inhomogeneous barrier height for n-InSb/p-GaAs heterojunction prepared by flash evaporation

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

“…(16). It is clear that the Table 3 Illumination dependent values of various electrical parameters obtained from reverse bias C −2 -V characteristics of Al-TiW-Pd2Si/n-Si SBD.…”

“…Under an external and a native electric field due to electron-hole diffusion at M/S interface, the holes swept to the back contact while electrons gathered at the junction. Also, it has been well known that there are currently many reports on experimental studies of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) Schottky barrier diodes (SBDs) [10][11][12][13][14][15][16][17]. Consequently, there would be an additional photocurrent over the usual dark diode current [18][19][20].…”

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…In general, there is a discrepancy between the BHs obtained from reverse bias C-V measurements and forward bias I-V measurements, i.e., the value of˚C V is significantly higher than˚I V . This discrepancy could be explained in terms of the existence of excess capacitance of devices due to N ss or dislocations at M/S interface and barrier height (BH) inhomogeneties [21][22][23][24][25][26][27][28]. It is well known that the electrical characterization only at room temperature or narrow temperature range of the semiconductor devices, such as metal-semiconductor (MS) or metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs), solar cells (SCs) and laser diodes (LDs), cannot give detailed information about their conduction mechanisms or the nature of barrier formation at M/S interface.…”

Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

“…There are many methods of determining the SBH based on I-V, C-V and photoelectric measurements in the literature [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Detailed knowledge of the current-transport process involved is essential in order to extract the barrier parameters, namely, BH, n and R s .…”