2020
DOI: 10.1016/j.diamond.2020.107798
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Study of graphene layer growth on dielectric substrate in microwave plasma torch at atmospheric pressure

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Cited by 20 publications
(15 citation statements)
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“…However, the separate planar graphene akes covered only a tiny part of the substrate. 12 In some studies, the graphene ake orientation was changed via controlling the methane and etching gas ow ratios without reporting the use of Faraday-cage-type protective shields. Notably, vertical graphene was grown on silicon via microwave PECVD using CH 4 /H 2 gas ow ratios higher than 5.5, and horizontal graphene was synthesized using lower methane/ hydrogen gas ow ratios.…”
Section: Introductionmentioning
confidence: 99%
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“…However, the separate planar graphene akes covered only a tiny part of the substrate. 12 In some studies, the graphene ake orientation was changed via controlling the methane and etching gas ow ratios without reporting the use of Faraday-cage-type protective shields. Notably, vertical graphene was grown on silicon via microwave PECVD using CH 4 /H 2 gas ow ratios higher than 5.5, and horizontal graphene was synthesized using lower methane/ hydrogen gas ow ratios.…”
Section: Introductionmentioning
confidence: 99%
“…9 Some studies have shown the growth of vertical and planar graphene in the same PECVD system on dielectric or semiconducting substrates. 5,[11][12][13][14][15][16] Switching between the growth of planar and vertical graphene on a glass substrate can be achieved using a copperfoam-based Faraday cage with different pore sizes. 5 However, this method has some disadvantages.…”
Section: Introductionmentioning
confidence: 99%
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“…The GSG is formed in the afterglow region of plasma discharge where nucleation and growth take place [27,28]. Microwave (MW)-induced plasma is predominantly utilized for such synthesis [29][30][31]. Jašek et al [31] deposited GSG layers from ethanol vapors in argon in this way.…”
Section: Introductionmentioning
confidence: 99%
“…Microwave (MW)-induced plasma is predominantly utilized for such synthesis [29][30][31]. Jašek et al [31] deposited GSG layers from ethanol vapors in argon in this way. Such plasma heated the Si/SiO 2 substrate to ~650-1150 • C, depending on plasma conditions.…”
Section: Introductionmentioning
confidence: 99%