Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors

Abstract

Nondestructive evaluation of carrier concentration in the channel layer of In 0.5 Ga 0.5 P/In 0.2 Ga 0.8 As/GaAs heterostructure field-effect transistors by Raman scatteringThe device properties of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors ͑DDDCHFETs͒ are comprehensively analyzed and demonstrated. Based on the variations of delta-doped densities of InGaAs double channels and GaAs spacer thickness, the dc and rf characteristics are compared and studied. Due to the employed InGaAs DDDC structure and Schottky behaviors of InGaP ''insulator,'' good pinch-off and saturation characteristics, higher and linear transconductance, and good rf performances are obtained. Experimentally, for comparison, a practical DDDCHFET with good device properties is fabricated successfully. It is known that the experimental results are very consistent with theoretical simulation data.