Study of InP(100) surface nitridation by x‐ray photoelectron spectroscopy

Abstract

Ion beam nitridation of indium phosphide (100) substrates was studied using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Argon ion bombardment of the InP(100) surface removes the native oxides and induces the formation of three-dimensional indium clusters. After cleaning, the samples were nitrided in an ultrahigh vacuum chamber using a home-made radiofrequency plasma source (13.56 MHz) that allows nitridation at low pressures (10 −4 Pa). We have studied the influence of temperature on the nitridation mechanisms. For low temperature (T < 200• C), no variation of the metallic indium droplets was observed; for high temperature (T > 270 • C), the first layers of the substrate were damaged. The optimal temperature for the nitridation of InP(100) was found to be 250 • C.

Nitridation of InP(100) surface studied by synchrotron radiation

“…The effect of annealing on the nitridated layers at 450°C has been also analysed. It appears that this system is stable until this temperature, well above the congruent evaporation temperature (370°C) of clean InP(100) : no increase of metallic indium bonds due to decomposition of the substrate is detected as shown in previous works [16] studying the InP(100) surfaces I. …”

AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+and H+ions bombardment.

“…The remaining contamination layer on the sample was mainly composed of carbon and oxygen as revealed by the first recorded AES spectra (C-KLL and O-KLL) [15][16][17]. The sample was sputtercleaned, as usual, by a normal incidence Ar + ion beam at low energy of 500 eV with a current density of about 2.10 -6 A.cm -2 to remove these contaminants.…”

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He&lt;sup&gt;+&lt;/sup&gt; and H&lt;sup&gt;+&lt;/sup&gt; Ions Bombardment

“…The remaining contamination layer on the sample was mainly composed of carbon and oxygen as revealed by the first recorded AES spectra (C-KLL and O-KLL) [15][16][17]. The sample was sputter-cleaned, as usual, by a normal incidence Ar + ion beam at low energy of 500 eV with a current density of about 2 × 10 −6 A·cm −2 to remove these contaminants.…”