Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k∙p method

Abstract

The interdiffusion effect of GaInNAs/ GaAs single quantum well ͑QW͒ has been investigated with the eight-band k • p method. The as-grown 64-Å Ga 0.64 In 0.36 N 0.017 As 0.983 / 250-Å GaAs QW is experimentally determined to emit at 1.27 m in the literature. The compositional profile of the QW after interdiffusion is modeled by an error function distribution. Varying the diffusion length, the effects of interdiffusion on the unstrained band gap, in-plain strain, and confinement profiles are studied. The curve of the ground-state transition ͑C1-HH1͒ energy dependence on the interdiffusion length is obtained. Our work shows that the interdiffusion effect on the strain can greatly change the confinement profile of the lighthole ͑LH͒, which is confined in the GaAs layer, not in the GaInNAs layer. From the transition energy curve, a blueshift of 51 meV is derived. This interdiffusion mechanism can be utilized in the tuning of the laser operation wavelength.

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

“…By employing calculations based on the 6 + 2-band k Á p method [19,20], the calculated NP transition energy values of samples 2 and 3 are 908.4 meV and 906 meV, respectively. These values are in close agreement with the measured value of 907 ± 3 meV and 904 ± 2 meV, respectively.…”

Interdiffusion effect on GaAsSbN/GaAs quantum well structure studied by 10-band k•p model

“…Consequently, all the QW parameters related to the Sb concentration will vary accordingly, which first causes the variation of strain and subsequently affects the subband energy distribution across the QW. The interdiffusion effects on strain were shown in full detail in our previous work [18]. …”

“…We have also investigated the interdiffusion effects of GaInAsN/GaAs QW by using eight-band k•p model [18]. In order to take into account the influence of the band structure by nitrogen-induced level, E N , a 10-band k•p model [23] was proposed which add two more spin-degenerated states to the eight-band Hamiltonian in Ref.…”

“…In order to take into account the influence of the band structure by nitrogen-induced level, E N , a 10-band k•p model [23] was proposed which add two more spin-degenerated states to the eight-band Hamiltonian in Ref. [18] through the following matrix [24,25]:…”

The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells

“…As there is a large lattice-mismatch between GaInAs and GaAs, the presence of strain significantly modifies the band structure. The strain tensors in GaInAs/GaAs quantum wells are given by [28] …”