Study of Internal Linear Inductively Coupled Plasma Source for Ultra Large-Scale Flat Panel Display Processing

Lim, Jae‐Hak; Kim, Kyong Nam; Gweon, Gwang Ho; Park, Jae Beom; Yeom, Geun Young

doi:10.1007/s11090-009-9176-0

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…Improved radial uniformity has been demonstrated by using C-type ferrite enhancement in inductively coupled plasmas (ICPs) [7]. Various other configurations of plasma sources such as CCPs, very high frequency capacitively coupled plasmas (VHF-CCPs) and ICPs (ferrite core assisted and dual-comb-type antennas) have been proposed and investigated [8][9][10][11][12][13][14][15]. Large-area plasma sources are also important in fusion machines.…”

Section: Introductionmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

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Using an emissive probe technique in 'saturated floating-potential' mode, an investigation of temporal evolution of plasma potential (V p) in a large-area pulsed dual-frequency (2 MHz/13.56 MHz) inductively coupled plasma (p-DF-CCP) is carried out. The discharge is sustained by an external type ICP antenna at a pressure of 10 mTorr in argon gas environment. The 2 MHz rf is pulsed at a frequency of 1 kHz and a duty ratio of 50%. The emissive probe is located at the centre of the substrate and 20 mm above (r = 00 mm and z = −20 mm) it. The low-frequency power (P 2 MHz) is varied from 100 to 800 W, whereas the high-frequency power (P 13.56 MHz) from 100 to 700 W. V p remains positive during the whole pulse period. The prominent features in the V p profile remain similar under all operating conditions; however, the magnitude of V p depends on the applied rf powers. For further investigation, three distinct regions in a typical V p profile are clearly identified as 'overshoot-immediately after pulse begins', the 'on-time' and the 'off-time'. V p increases with increasing P 13.56 MHz and has reverse trend with P 2 MHz. The electron temperature (T e) is calculated using the relation between floating potential (V f) and plasma potential (V p) for the argon plasma and it is found that T e increases with increasing P 13.56 MHz and decreases with P 2 MHz. It is found that V p could be modulated using a suitable power combination on two frequencies (P 13.56 MHz /P 2 MHz). This paper is an attempt to investigate the time-resolved V p and T e with rf powers in a pulsed dual-frequency ICP.

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Section: Introductionmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

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“…甚高频 [19] ~1. [29] 、(双)梳状 [18,22,[29][30][31][32][33] 、U 形阵列 [34][35][36][37] 等，典型的天线结构如图意图及多级磁场阵列磁力线位形。这种结构 [16,[52][53][54][55] 通过多个线圈的组合及适当的磁场位形对等离子体的约束作用以获得大面积(~880 × 660 mm 2 )、高密度 (~3.18 × 10 11 cm −3 )、均匀(不均匀度~5%)等离子体源。这种磁场增强型等离子体激励源放电产生的等离子体密度与无磁场等离子体源的等离子体密度相比提高了 50%，且等离子体的均匀性也有显著的提高；但是相同功率下，电子温度有所降低。 J. Madocks等 [15]…”

Section: 线形等离子体源unclassified

Research Progress of the Linear Plasma Source Used in the Films Deposition over Large Areas

左¹

2012

APP

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The characteristics and application of several kinds of linear plasma sources are introduced. According to the power sources for plasma systems, there are DC, RF, VHF, microwave and dual frequency linear plasma sources, which with a magnet system are called magnetic field enhanced linear plasma sources. Compared with the conventional large scale plasma sources, linear plasma sources take the advantage that they just need to obtain uniform and stable plasma in one dimension. Through the linear plasma array or moving the substrate in horizontal and vertical direction, large scale uniform thin film can be deposited. Recent years, researchers tried to use the magnetic field to confine plasma so as to reduce the recombination loss in plasma and improve the density, uniformity and stability of plasma. The linear plasma sources with the density above 10 11 cm −3 , dis-uniformity below ±5% (L > 1 m), have been applied to fabricate large scale Si 3 N 4 , SiO 2 , intrinsic Si and nano-diamond thin film.

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“…Many schemes, based on multiple frequencies, power splitting mechanism, pulse shape tailoring, and customized shape of bias power, have been proposed. [16][17][18][19][20][21][22][23][24][25][26][27][28][29] Recently, a new approach, based on using dual frequency and power splitting mechanism in ICP source, has been proposed to provide a good discharge uniformity and control on discharge parameters. 30,31 Pulsing the plasma source provides an added flexibility in controlling the discharge parameters and proves to be an important tool for tailoring discharge parameters specific to a particular application.…”

Section: Introductionmentioning

confidence: 99%

Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF4 and effect of duty ratio

et al. 2015

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Controlling time averaged ion energy distribution (IED) is becoming increasingly important in many plasma material processing applications for plasma etching and deposition. The present study reports the evolution of ion energy distributions with radio frequency (RF) powers in a pulsed dual frequency inductively discharge and also investigates the effect of duty ratio. The discharge has been sustained using two radio frequency, low (P 2 MHz ¼ 2 MHz) and high (P 13.56 MHz ¼ 13.56 MHz) at a pressure of 10 mTorr in argon (90%) and CF 4 (10%) environment. The low frequency RF powers have been varied from 100 to 600 W, whereas the high frequency powers from 200 to 1200 W. Typically, IEDs show bimodal structure and energy width (energy separation between the high and low energy peaks) increases with increasing P 13.56 MHz ; however, it shows opposite trends with P 2 MHz. It has been observed that IEDs bimodal structure tends to mono-modal structure and energy peaks shift towards low energy side as duty ratio increases, keeping pulse power owing to mode transition (capacitive to inductive) constant. V

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Study of Internal Linear Inductively Coupled Plasma Source for Ultra Large-Scale Flat Panel Display Processing

Cited by 8 publications

References 11 publications

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Research Progress of the Linear Plasma Source Used in the Films Deposition over Large Areas

Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF4 and effect of duty ratio

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