Study of interrupted MOVPE growth of InGaAs/InP superlattice

Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

“…Generally, it is reported that an abrupt interface is seldom obtained in InGaAs/InP heterostructures. [5][6][7] The results of rocking curve simulation reveals that about one monolayer of P was incorporated at the initial stage of InGaAs growth and InAsP with an As composition of 0.09 is formed at the InP-on-InGaAs interface which decreases as the growth proceeds. We believe that P is incorporated from the residual PH 3 in the gas phase and As from the deposit on the wall as was suggested previously.…”

Observation of optical bleaching at 1.06μm in AlInAs/AlGaInAs multiple quantum wells

“…The simulation corresponding to the structure described provides a reasonable fit to the pattern without introducing interface layers into the simulation. This result suggests that mixed group-III alloys generate abrupt interfaces without resorting to growth pauses required to properly terminate mixed group-V interfaces [18][19][20]. Fig.…”

Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

“…Details of the growth system have been described elsewhere. 11 Samples for the STM studies were cleaved in an ultrahigh-vacuum STM system at a base pressure of <2 • 10 -1~ Torr to expose an atomically fiat (110) crosssectional surface of the epitaxial layers, on which STM measurements were performed. Commercially available Pt-Ir tips cleaned in situ by electron bombardment were used for these studies.…”