Study of Linear Light Edge-Emitting Diodes Based on InP/InGaAsP/InP Heterostructure with the Crescent Active Region

Васильев, М. Г.; Васильев, А. М.; Kostin, Yu. O.; Shelyakin, A. A.; Изотов, А. Д.

doi:10.1134/s2075113318050295

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“…The thickness of the oxide film was 0.15 µm. The processes of liquid-phase epitaxy were conducted in the hydrogen atmosphere with the dew point of -80 °C in a plate made of high-purity MPG-7 graphite with a limited growth cell volume [19].…”

Section: Creating and Burying A "Fishtail" Laser Pinned Structurementioning

confidence: 99%

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Васильев

Изотов

et al. 2021

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The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of <111>, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

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Section: Creating and Burying A "Fishtail" Laser Pinned Structurementioning

confidence: 99%