Study of LiTaO&lt;inf&gt;3&lt;/inf&gt;/ST-quartz bonding with amorphous interlayer assisted by VUV/O&lt;inf&gt;3&lt;/inf&gt; treatment for SAW device

Suzaki, Haruka; Kuwae, Hiroyuki; Okada, Akiko; Shoji, Shuichi; Mizuno, Jun

doi:10.1109/impact.2016.7799986

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…The LN/quartz could not be bonded every time without the amorphous film, while the bonding succeeded when combined with the amorphous Al 2 O 3 film. It is because the single crystal surfaces, especially quartz surface, were difficult to activated by the surface treatment by providing the active surface using the AIB method as previously reported [11,12]. The amorphous Al 2 O 3 films pre-…”

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confidence: 97%

Low-Residual-Stress Amorphous Film for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Tezuka

Kuwae

Yamada

et al. 2020

Transactions of The Japan Institute of Electronics Packaging

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LiTaO 3 (LT)/quartz or LiNbO 3 (LN)/quartz bonded surface acoustic wave (SAW) substrates with an amorphous intermediate layer have been proposed for high-frequency communication. Requirements for 5G mobile communication are high-performance SAW substrates with a large SAW velocity, a small temperature coefficient of frequency, and a large electromechanical coupling factor. Reduction of the residual stress of the amorphous intermediate layer is expected to improve the bonding strength and SAW characteristics of the bonded substrate. In this report, a method of low-residualstress amorphous film deposition for LT/quartz or LN/quartz bonding was studied. The residual stresses of amorphous SiO 2 and Al 2 O 3 films deposited by ion beam sputtering, electron cyclotron resonance sputtering, and atomic layer deposition (ALD) were evaluated. The LT substrate with an amorphous Al 2 O 3 film deposited by ALD (ALD-Al 2 O 3) had the minimum warpage of 0.152 µm and residual stress of 127.3 MPa. The ALD-Al 2 O 3 film formed with near-identical thicknesses on both sides of the LT substrate simultaneously, which is likely the source of the low residual stress of the ALD-Al 2 O 3 film. A maximum LN/quartz bonding strength of 3.7 MPa was achieved with the ALD-Al 2 O 3 film. These results indicate that ALD-Al 2 O 3 films are promising materials for LT/quartz or LN/quartz SAW substrates in 5G devices.

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confidence: 97%

Low-Residual-Stress Amorphous Film for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Tezuka

Kuwae

Yamada

et al. 2020

Transactions of The Japan Institute of Electronics Packaging

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“…This is because Ar Plasma etches out the surface where most of the OH bonds are found. Combined with surface roughness, there is a possibility that this effect leads to poor bonding since hydroxyl rich surfaces can exhibit better surface adhesion due to hydrogen bonding interactions between the surfaces [7]. For VUV O 3 , the increase in adsorbed water can be explained by water adsorbing consecutively after it has been released initially by the VUV breaking the bonds of the thin carbon layer on the Au surface where it rests atop…”

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confidence: 99%

Effects of Surface Composition on Bonding Strength for Direct Cu-Cu Bonding with Passivation Layer

Pétillot,

Kobayashi,

Shoji

et al. 2023

Transactions of The Japan Institute of Electronics Packaging

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Cu bonding with an addition of a thin interfacial layer has been gaining attention for providing low-temperature bonding solutions for direct Cu bonding in advanced packaging. In this paper, Cu surfaces with an Au thin film passivation layer were exposed to various dry surface treatments and analyzed to understand the effects of carbon contaminants on bonding strength. We have shown that Vacuum Ultraviolet (VUV) N 2 treated samples improved the bonding strength and yield significantly compared to the bare, Plasma Ar and VUV O 3 treated samples as CO groups were removed from the bonding interface without affecting the roughness of the surface.

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Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO₃/Quartz or LiNbO₃/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Tezuka

Kuwae

Yamada

et al. 2019

2019 International Conference on Electronics Packaging (ICEP)

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Study of LiTaO<inf>3</inf>/ST-quartz bonding with amorphous interlayer assisted by VUV/O<inf>3</inf> treatment for SAW device

Cited by 3 publications

References 14 publications

Low-Residual-Stress Amorphous Film for LiTaO<sub>3</sub>/Quartz or LiNbO<sub>3</sub>/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Low-Residual-Stress Amorphous Film for LiTaO<sub>3</sub>/Quartz or LiNbO<sub>3</sub>/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Effects of Surface Composition on Bonding Strength for Direct Cu-Cu Bonding with Passivation Layer

Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO₃/Quartz or LiNbO₃/Quartz Bonding toward 5G Surface Acoustic Wave Devices

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Study of LiTaO<inf>3</inf>/ST-quartz bonding with amorphous interlayer assisted by VUV/O<inf>3</inf> treatment for SAW device

Cited by 3 publications

References 14 publications

Low-Residual-Stress Amorphous Film for LiTaO<sub>3</sub>/Quartz or LiNbO<sub>3</sub>/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Low-Residual-Stress Amorphous Film for LiTaO<sub>3</sub>/Quartz or LiNbO<sub>3</sub>/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Effects of Surface Composition on Bonding Strength for Direct Cu-Cu Bonding with Passivation Layer

Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices

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Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO₃/Quartz or LiNbO₃/Quartz Bonding toward 5G Surface Acoustic Wave Devices