Study of Low-Energy Doping Processes Using Continuous Anodic Oxidation Technique/Differential Hall Effect Measurements

Abstract

Comparing with conventional spreading resistance profiling and differential Hall effect (DHE) methods, the continuous anodic oxidation technique/DHE (CAOT/DHE) technique may achieve more reasonable profiles of carrier concentration n h (x), mobility μ h (x), and resistivity ρ(x) and more reasonable carrier dose and x j in Si substrate. It has been successfully used to study ultralow energy doping techniques including B beam-line implant and B 2 H 6 plasma doping (PLAD). CAOT/DHE data support the fact that the devices fabricated by PLAD achieve improvement to those fabricated by beam-line implant because PLAD offered higher surface carrier concentration and carrier dose. CAOT/DHE data quantitatively verify the so-called solid solubility limit activation theory-the carrier profiles and secondary ion mass spectrometry (SIMS) B impurity profiles under B SS are very well consistent on both beam-line and PLAD implants. As a cheaper and standard metrology, the SIMS/ARXPS method with the solid solubility limit activation theory may be used to quantitatively or semiquantitatively study the doping and activation processes.Index Terms-Carrier and mobility profiles, continuous anodic oxidation technique/differential Hall effect (CAOT/DHE), plasma doping (PLAD), spreading resistance profiling (SRP).