2014
DOI: 10.1016/j.materresbull.2013.10.012
|View full text |Cite
|
Sign up to set email alerts
|

Study of Maxwell–Wagner (M–W) relaxation behavior and hysteresis observed in bismuth titanate layered structure obtained by solution combustion synthesis using dextrose as fuel

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
8
0

Year Published

2015
2015
2019
2019

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 18 publications
(10 citation statements)
references
References 29 publications
2
8
0
Order By: Relevance
“…To understand these phenomena, it requires an insight to the mechanism of conduction. The conduction activation energy of BIT and Sr-doped samples at high temperatures is ranging from 0.91 to 1.01 eV, close to the reported values of charged oxygen vacancies in perovskite oxides [33,[35][36][37][38]. Paladino [35] reported that the activation energy for diffusion of the doubleionized oxygen vacancies in SrTiO 3 crystal is 0.98 eV.…”
Section: Discussionsupporting
confidence: 78%
“…To understand these phenomena, it requires an insight to the mechanism of conduction. The conduction activation energy of BIT and Sr-doped samples at high temperatures is ranging from 0.91 to 1.01 eV, close to the reported values of charged oxygen vacancies in perovskite oxides [33,[35][36][37][38]. Paladino [35] reported that the activation energy for diffusion of the doubleionized oxygen vacancies in SrTiO 3 crystal is 0.98 eV.…”
Section: Discussionsupporting
confidence: 78%
“…In addition, the value of dielectric constant increases for ceramic with Ce, Zr co-doped BIT as compared to undoped bismuth titanate as reported in our earlier publications [15,16]. An anomalous peak is observed around 550°C in pure BIT [16] which is attributed to the presence of oxygen vacancy sites and defects created due to Bi 3? ion volatilization.…”
Section: Dielectric Propertiessupporting
confidence: 63%
“…4. The values of loss tangent of the Bi 3.4 Ce 0.6 Ti 2.4 Zr 0.6 O 12 ceramics decreased drastically as compared to that of pure bismuth titanate ceramic prepared using solution combustion route [16]. This decrease in the value of tand can be attributed to the combined effect of Ce 3?…”
Section: Dielectric Propertiesmentioning
confidence: 89%
“…Bismuth titanate (Bi 4 Ti 3 O 12 ) is also considered a promising lead-free electroceramic material, with wide applicability in electronic elements as transducers, piezoelectric, and memory devices. The structure of this compound consists of (Bi 2 Ti 3 O 10 ) 2– layers formed by the BiTiO 3 unit cells of perovskite-like structures with alternating layers of (Bi 2 O 2 ) 2+ perpendicular to the c -axis. It has a high Curie temperature (675 °C) and possesses an orthorhombic structure below that temperature.…”
Section: Solution Combustion-derived Materialsmentioning
confidence: 99%