Study of minority carrier traps in <i>p</i>-GaN gate HEMT by optical deep level transient spectroscopy

Chen, Jiaxiang; Huang, Wei; Qu, Haolan; Zhang, Yu; Zhou, Jianjun; Chen, Baile; Zou, Xinbo

doi:10.1063/5.0083362

Cited by 14 publications

(3 citation statements)

References 41 publications

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“…Fig. 3(a) presents the isothermal ODLTS spectra of trap H1 [35,36] , which was performed from 315 to 343 K with U R of −6 V and t p of 1 s. The emission time constants (τ e ) were determined by extracting valley position from isothermal ODLTS spectra. As the temperature increases, the signal valley associated with trap H1 shifts towards a lower T W , indicating a decrease of τ e .…”

Section: Resultsmentioning

confidence: 99%

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Sui,

Chen,

et al. 2024

J. Semicond.

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Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

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Section: Resultsmentioning

confidence: 99%

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Sui,

Chen,

et al. 2024

J. Semicond.

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“…Trap parameters can be extracted from capacitance changes at different temperatures after going through the above steps. One of the superiorities of ODLTS is that it overcomes the limitations of DLTS in studying minority traps, with high sensitivity to ultra-deep-level traps [42].…”

Section: Dltsmentioning

confidence: 99%

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Zou,

Yang,

Qiao

et al. 2023

Micromachines

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Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs.

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“…[20,21] Deep-level optical spectroscopy is another method for measuring deep traps, but also limited for traps with energy more than 1 eV. [22] Other methods for accessing the electronic signature of defects include positron annihilation spectroscopy (PAS) [23] and cathodoluminescence (CL). [24] PAS mainly reveals the nature, size, and charge state of defects.…”

Section: Introductionmentioning

confidence: 99%

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

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Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Cited by 14 publications

References 41 publications

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

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