1977
DOI: 10.1021/ja00451a002
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Study of n-type gallium arsenide- and gallium phosphide-based photoelectrochemical cells. Stabilization by kinetic control and conversion of optical energy to electricity

Abstract: Surface states" located between the valence and conduction band have been detected optically in photoelectrochemical cells employing aqueous electrolytes for Sn02: H.

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Cited by 75 publications
(49 citation statements)
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“…On the basis of the direct transfer mechanism, one would therefore expect the reagent having the lowest levels to be the most reactive for holes, in contrast with the experimental result. The observation, that the hole reactivity decreases with increasing Eo value has been also made on TiO, [18], ZnO [7,18,19], CdSe [20], Table 4 Ratios of rate constants for the photooxidation of current-doubling (A) and competing reagents CdS [ 18,211, GaP and GaAs [21,22]. For materials with a rather high valence band (CdSe, Gap, GaAs), it may be argued that the energy levels of the species with the highest Eo may be below the valence band edge.…”
Section: This Equation Was Verified By Plotting Log[(2 -M ) / ( Ml)] mentioning
confidence: 93%
“…On the basis of the direct transfer mechanism, one would therefore expect the reagent having the lowest levels to be the most reactive for holes, in contrast with the experimental result. The observation, that the hole reactivity decreases with increasing Eo value has been also made on TiO, [18], ZnO [7,18,19], CdSe [20], Table 4 Ratios of rate constants for the photooxidation of current-doubling (A) and competing reagents CdS [ 18,211, GaP and GaAs [21,22]. For materials with a rather high valence band (CdSe, Gap, GaAs), it may be argued that the energy levels of the species with the highest Eo may be below the valence band edge.…”
Section: This Equation Was Verified By Plotting Log[(2 -M ) / ( Ml)] mentioning
confidence: 93%
“…Conversion of light to electricity with devices called photoelectrochemical cells has been an area of considerable activity in the last 2 years (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). Except for one cell that uses a p-type CdTe photocathode (12), the key element of such cells is an n-type semiconducting photoanode.…”
mentioning
confidence: 99%
“…n-Type Si photoelectrodes were fashioned as described (1)(2)(3)(4)(5). Contact was made to the Si by rubbing a Ga-In eutectic on the back side.…”
mentioning
confidence: 99%
“…There have been active studies to stabilize these photoanodes by use of suitable redox compounds [2,6,12,13,[24][25][26][27][28][29][30]. The reducing agents can react with the photogenerated holes in the valence band.…”
Section: A) Stabilitymentioning
confidence: 99%
“…Many efforts have recently been concentrated on the above problem, i.e., surppression of dissolution of unstable semiconductor photoelectrodes. It has been established that stabilization of these electrodes can be achieved by addition of suitable redox species in the electrolyte solution [12,13,[24][25][26][27][28][29][30]. We studied the competitive photoanodic oxidation at a CdS electrode in electrolytes containing various reducing agents [12,13].…”
Section: -2-3 Regenerative Electrochemical Photocellmentioning
confidence: 99%