Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Галиев, Г. Б.; Пушкарев, С. С.; Васильевский, И. С.; Климов, Е. А.; Имамов, Р. М.

doi:10.1134/s1063782613070075

Cited by 9 publications

(10 citation statements)

References 16 publications

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“…In III-V lattice-mismatched heteroepitaxy, eight dislocation slip systems can be activated and the metamorphic Al(Ga)InAs buffers relieve their strain mostly by formatting a misfit dislocation of a/2⟨110⟩{111}. [12] The burgers vectors of a/2⟨101⟩-type dislocations do not sit perfectly on their [110] or [1][2][3][4][5][6][7][8][9][10] line direction but are leaning off towards the [001] direction. These burgers vectors can be resolved into three parts, i.e., an edge component, a screw component both in ⟨110⟩, and another tilt component in ⟨001⟩.…”

Section: Resultsmentioning

confidence: 99%

“…To obtain high quality Al(Ga)InAs buffers, it is nec-essary to investigate and understand the properties of dislocations formed during the strain-relaxation process. Our experiments present that the dislocation distributions and tilts in [110] and [1][2][3][4][5][6][7][8][9][10] directions of the compositionally undulating Al(Ga)InAs differ from those of the conventional step-graded samples, which are attributed to the different effects of the reverse-graded layer on α and β dislocations.…”

Section: Introductionmentioning

confidence: 92%

“…[2] Various metamorphic buffers are often grown with the composition of the compound changing linearly [3] or by steps, [4] and the application of graded buffers helps to reduce the threading dislocation density (TDD) which could otherwise degrade the performance of the devices. Among the used metamorphic buffer materials, [5][6][7] the Al(Ga)InAs alloy system is found to be quite efficient in achieving high performance in optoelectronic devices. Such performance is similar to or even better than what can be achieved in native InP-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

et al. 2017

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Compositionally undulating step-graded Al(Ga)In x As (x = 0.05-0.52) buffers with the following InP layer were grown by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs with a 15 ∘ miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and (004) reciprocal space maps (RSM) along two orthogonal ⟨110⟩ directions. The results suggested that such reverse-graded layers have different effects on α and β dislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of −1.43 ∘ was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

et al. 2017

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“…A method whereby balanced-mismatched {In х -Δх Ga 1 -(х -Δх) As/In х + Δх Al 1 -(х + Δх) As} superlattices are implanted immediately inside a metamorphic buffer layer is proposed and implemented [25]. It is established that the increased number (from 5 to 30) of spacings introduced into superlattice heterostructures leads to an improvement in the structural quality of metamorphic nanoheterostructures (reduces the amount of threading dislocations and increases the electron mobility).…”

Section: Discussionmentioning

confidence: 99%

“…A procedure for embedding several inverse steps directly into the metamorphic buffer layer is proposed and implemented [26].…”

Section: Discussionmentioning

confidence: 99%

High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

Галиев

Климов

Имамов

et al. 2016

J. Synch. Investig.

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InAlAs/InGaAs/InAlAs nanoheterostructures with different structures of metamorphic buffer layer and quantum well, which were grown by means of molecular-beam epitaxy on GaAs and InP substrates, are investigated. The laboratory technology of the growth of the given nanoheterostructures with predicted properties is perfected. The potential of an approach based on the comprehensive analysis of experimental data obtained via different techniques, namely, X-ray diffractometry, electron diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and atomic-force microscopy is studied. The metamorphic buffer layer design is improved on the basis of the results of the performed investigations. A method whereby balanced-mismatched superlattices are introduced directly inside the metamorphic buffer layer is proposed. It is established that the technological parameters of the growth of nanoheterostructures affect their structural perfection and electrophysical properties.

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Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Virt

Rudyi

Lopatynskyi

et al. 2016

Journal of Elec Materi

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Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al 2 O 3 ) and on Si covered with a Si 3 N 4 buffer layer. The Si 3 N 4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si 3 N 4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

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Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Cited by 9 publications

References 16 publications

Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

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