Study of Nitrogen terminated doped zigzag GNR FET exhibiting negative differential resistance

Investigation on nickel ferrite nanowire device exhibiting negative differential resistance — a first-principles investigation

“…The negative differential resistance properties are observed on various materials with different morphology such as ZnO nanorod, porous silicon devices and graphene nanoribbon FET [38,64,65]. The NDR property of NiFe 2 O 4 nanowire device is similar to the reported works, which further strengthens the present work.…”

“…Chen [37] investigated NDR in oxide-based resistance-switching devices. Gupta and Jaiswal [38] reported NDR in nitrogen terminated doped zigzag graphene nano-ribbon field effect transistor. Zhao et al [39] studied NDR property and electronic transport properties of a gated C60 dimer molecule sandwiched between two gold electrodes.…”

Electronic and transport behavior of doped armchair silicene nanoribbons exhibiting negative differential resistance and its FET performance

“…Our result for the cutoff frequency f co is better than that in previously reported graphene based transistors. [40][41][42][43][44][45][46] Finally, the comparison between the In doped ASiNR-FET and other 2D materials has been made by presenting the gures of merit (FOM) in Table 4, which shows that the highest I p /I v ratio is achieved at room temperature (300 K), with a peak current density of 0.137 mA nm À2 . Furthermore, it is interesting that the NDR effect generally appeared within the high bias regions, while the NDR behaviors in the ASiNR-FET are observed at low bias (from 0.0 to 0.7 V), which reduced the power consumption in the device design process.…”

Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey

“…Using DFT and NEGF formalisms-based first-principle approach, nano-FET can be designed using various structural modifications. Various properties of these nano-FETs' are also observed, for example, scalability assessment, highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps, maximum obtainable current, RF performance, linearity investigation [54][55][56][57][58][59][60][61]. Conjugated co-oligomers-based molecular diode can be designed using DFT-and NEGFbased formalisms.…”

“…If the semiconductor does not have any impurity doping, then it is called intrinsic or pure semiconductor. On the other hand, if the semiconductor is doped with foreign atoms or molecules, then it is known as an extrinsic or impure semiconductor [55][56][57][58][59][60].…”