2020
DOI: 10.1007/s00339-020-3283-4
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Study of optical and dielectric constants of hybrid SnO2 electrospun nanostructures

Abstract: The aim of this paper was to prepare SnO 2 nanowires using electrospinning and calcination processes from a poly(vinylpyrrolidone), dimethylformamide, ethanol and tin(IV) chloride pentahydrate solution. The composite PVP/SnCl 4 nanofibers obtained via electrospinning method were dried and calcined in a vacuum to remove the polymer matrix at a temperature of 500 °C for 10 h. Three types of nanowires with a polymer to precursor ratios of 2:1, 1:1, 1:3 were produced. The morphology and chemical composition of as-… Show more

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Cited by 11 publications
(8 citation statements)
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“…Since the SnO 2 /MXene interface is exposed to air, ε i was allowed to be the permittivity of free space and δ was assumed to be 5 Å. ε sc and W are the relative dielectric constant of the semiconductor and depletion width, respectively. The value of ε sc is taken to be 2.3ε 0, and the depletion region width is considered to be 160 nm. The dependence of N ss on the bias voltage V can be obtained with the help of the following equation Figure b shows the plot of N ss (V) as a function of E c – E , implying that high-density traps are located at 0.23–0.86 eV beneath the conduction band energy level.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Since the SnO 2 /MXene interface is exposed to air, ε i was allowed to be the permittivity of free space and δ was assumed to be 5 Å. ε sc and W are the relative dielectric constant of the semiconductor and depletion width, respectively. The value of ε sc is taken to be 2.3ε 0, and the depletion region width is considered to be 160 nm. The dependence of N ss on the bias voltage V can be obtained with the help of the following equation Figure b shows the plot of N ss (V) as a function of E c – E , implying that high-density traps are located at 0.23–0.86 eV beneath the conduction band energy level.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Favorable optoelectronic properties of crystalline-amorphous hybrid SnO 2 nanowires are suggested by W. Matysiak et al [ 24 ] to be used in in modern flexible photovoltaic cells ( Table 5 , Figure 11 ). The research group, to which the Authors belong, was awarded a silver medal at the 5th China (Shanghai) International Invention & Innovation Expo in 2021 for the invention “Innovative flexible solid-state solar cell with a hybrid layered architecture”, for which the construction of which SnO 2 nanowires were used ( Figure 12 ).…”
Section: Selected Applications Of Electrospun 1d Mos Nanostructuresmentioning
confidence: 99%
“… ( a ) SEM image of SnO 2 nanowires calcined in 500 °C (Reprinted with kind permission from Springer [ 24 ]); UV-VIS: ( b ) absorption spectrum of SnO 2 nanowires calcined in 500 °C (Reprinted with kind permission from Nature [ 126 ]). …”
Section: Figurementioning
confidence: 99%
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