Study of Optical, Morphological and Structural Properties of ZnSe Thin Films Deposited by Evaporation

Caicedo, Luis; Cediel, G.; Dussán, A.; Sandino, J.; Calderón, C.; Gordillo, G.

doi:10.1002/1521-3951(200007)220:1<249::aid-pssb249>3.0.co;2-h

Cited by 13 publications

(6 citation statements)

References 2 publications

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“…This can also be attributed to the large stoichiometric deviations in the films grown at high deposition rates. In the case of ZnSe films deposited by thermal evaporation, a zinc blende structure was observed at lower deposition rates whereas a wurtzite structure was reported for those deposited at higher growth rates [19]. However, in the present study, we did not observe any such structural change in spite of a large variation in the deposition rate.…”

Section: Structural Propertiescontrasting

confidence: 83%

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Prathap

Subbaiah

Reddy

et al. 2007

J. Phys. D: Appl. Phys.

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Nanocrystalline ZnS films have been grown on glass substrates by close spaced evaporation at various deposition rates, with a constant substrate temperature of 300 °C. The x-ray photoelectron spectroscopy studies revealed that nearly stoichiometric ZnS layers were grown at deposition rates in the range 20–30 Å s−1. The x-ray diffraction data confirmed the cubic structure of ZnS films for all the deposition rates. The surface morphological studies were made using an atomic force microscope, which indicated a rough surface and that the roughness increases with the deposition rate. The optical analysis showed that the layers grown at a deposition rate of 30 Å s−1 exhibited the highest optical transmittance of 82%. The optical band gap of the films varied in the range 3.63–3.54 eV with the change in the deposition rate. The effect of the rate of deposition on the photoluminescence characteristics was also studied, which showed an increase in luminescence intensity with the decrease in the particle size. The electrical properties of the layers were highly influenced by the deposition rate. The temperature dependence of electrical conductivity was measured and the activation energies were also evaluated.

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Section: Structural Propertiescontrasting

confidence: 83%

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Prathap

Subbaiah

Reddy

et al. 2007

J. Phys. D: Appl. Phys.

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“…It was observed that the resistivity abruptly decreased for small addition of sulfur in ZnS x Se 1−x (0.25) and thereafter it was found to be almost constant with increase in sulfur content in the films. One of the prerequisites for the materials that are useful in solar cells as a buffer layer is that it should have high resistivity (∼10 5 cm) [33], so that it can effectively act as a barrier to the diffusion of unwanted impurities from the window to the absorber layer and to provide interface passivation [34]. Therefore, the annealed layers might be used as a buffer layer in solar photovoltaic cells.…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization of ZnS_xSe_1−xfilms deposited by close-spaced evaporation

Subbaiah¹,

Prathap²,

Reddy³

et al. 2007

J. Phys. D: Appl. Phys.

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Polycrystalline thin films of ZnSxSe1−x with x = 0, 0.25, 0.5, 0.75 and 1.0 have been synthesized using close-spaced evaporation. The films were deposited onto glass substrates at different substrate temperatures in the range 200–400 °C. The grown films were characterized using XRD, AFM, EDAX and UV–Vis–NIR spectrophotometer to determine the microstructural properties, composition and optical behaviour. All the ZnSxSe1−x films deposited between 275 and 300 °C were crystallized in cubic structure with a single peak that corresponds to the (1 1 1) plane as the preferred orientation. The composition analysis revealed that the films deposited at Ts = 275–325 °C were nearly stoichiometric. The average surface roughness for ZnSxSe1−x films deposited at 300 °C varied in the range 2–6 nm. The films were highly transparent with optical transmittance >85%. The evaluated energy band gap of the films increased with the increase of sulfur content in the layers and it varied in the range 2.61–3.60 eV. All the layers showed n-type electrical conductivity. The temperature dependence of conductivity was also studied and the activation energy values were evaluated.

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“…at 350°C. One of the pre-requisites for the materials that are useful in solar cells as a buffer layer is that it should have high resistivity (~10 5 Ωcm) [18], so that it can effectively act as a barrier layer to the diffusion of unwanted impurities from the window to the absorber layer and to provide interface passivation [19]. Therefore, these annealed layers were used as a buffer layer in solar photovoltaic cells.…”

Section: Zns 05 Se 05 Filmsmentioning

confidence: 99%

Studies on ZnS0.5Se0.5 buffer based thin film solar cells

et al. 2008

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Study of Optical, Morphological and Structural Properties of ZnSe Thin Films Deposited by Evaporation

Cited by 13 publications

References 2 publications

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Growth and characterization of ZnS_xSe_1−xfilms deposited by close-spaced evaporation

Studies on ZnS0.5Se0.5 buffer based thin film solar cells

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Study of Optical, Morphological and Structural Properties of ZnSe Thin Films Deposited by Evaporation

Cited by 13 publications

References 2 publications

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Influence of growth rate on microstructure and optoelectronic behaviour of ZnS films

Growth and characterization of ZnSxSe1−xfilms deposited by close-spaced evaporation

Studies on ZnS0.5Se0.5 buffer based thin film solar cells

Contact Info

Product

Resources

About

Growth and characterization of ZnS_xSe_1−xfilms deposited by close-spaced evaporation