Study of Oxidation of TiSi<sub>2</sub> Thin Film by XPS

Yang, Wei Yi; Iwakuro, Hiroaki; Yagi, Hideichi; Kuroda, Tsukasa; Nakamura, Shōgo

doi:10.1143/jjap.23.1560

Cited by 41 publications

(12 citation statements)

References 16 publications

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“…14,32 Therefore, the formation of Si−TiCl 4−n , which can occur on hydrogenterminated silicon, is not expected on a SiO 2 surface. Moreover, the binding energy of Ti directly bonded to Si lies ∼5 eV below that of Ti 4+ in TiO 2 , 33,34 whereas in our films Ti 3+ is found 1.2 eV below Ti 4+ . Thus, we exclude Ti 3+ to originate from Si−Ti bond formation.…”

Section: ■ Results and Discussioncontrasting

confidence: 56%

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study

2017

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Ultrathin TiO2 films received renewed attention in the field of photoelectrochemical water splitting as corrosion protection layers for unstable, small-bandgap semiconductors. Because nucleation on the substrate can differ from steady-state growth of the film itself, it is important to understand the nucleation behavior on a specific surface. In this work, we studied the nucleation mechanism of atomic layer deposition-grown TiO2 from TiCl4 and H2O on as-received silicon by means of in-line X-ray photoelectron spectroscopy. Within a region of ∼0.4 nm of the SiO2/TiO2 interface, the presence of Ti3+ states are detected. In this region, the Ti, O, and Cl species are found to be more strongly bonded. At the initial stages of film growth, prolonged TiCl4 exposure is necessary to reach a saturated surface chemistry, which is in contrast to the outcome of growth per cycle saturation curve analysis. A prolonged water exposure experiment suggests that residual chlorine impurities can be prevented by using a sufficiently long water dose. This is particularly interesting for photoelectrode systems that cannot tolerate high temperatures. When this restriction does not apply, a postdeposition anneal at 400 °C in vacuum is a well-known option to reduce the chlorine content from the surface and the bulk of up to 10 nm thick films without affecting the stoichiometry. These insights will facilitate the optimization of the electronic properties and the materials design of efficient ultrathin protection layers for photoelectrodes for photoelectrochemical water splitting applications.

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Section: ■ Results and Discussioncontrasting

confidence: 56%

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study

2017

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“…Further etching leads to peak shifting towards higher binding energy in a similar fashion as that for the other elements, particularly, the N 1s. These peaks SiO2 [58,59]. However, the binding energy for SiO2 varies widely as reported in the literature, [47,54], therefore, 104.4 eV might be related to an oxidation state of Si and we refer this as Si-O bond.…”

Section: Bonding Further the Peak Shifting In The Intermediate Bindimentioning

confidence: 77%

“…shown in the literature that depending on N concentration the binding energy shifts for silicon oxynitride (Si-N-O) from the binding energy of Si3N4 to that of SiO2 [56,57]. Here the shift extends up to 104.4 eV whereas, 103.3 eV is generally considered as the binding energy of SiO2 [58,59]. However, the binding energy for SiO2 varies widely as reported in the literature, [47,54], therefore, 104.4 eV might be related to an oxidation state of Si and we refer this as Si-O bond.…”

Section: Resultsmentioning

confidence: 99%

Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy

Yadav

Sahoo

2021

Applied Surface Science

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Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium nitride and silicide based binary composites while undergoing high vacuum annealing process at temperatures 650°C and above. Diffusion of thermally decomposed Si and N atoms from Si3N4 and their subsequent chemical reaction with Ti have been probed by X-ray photo electron spectroscopy. For annealing at 800°C and above, most of the Si atoms show preferences to stay in elemental form rather than developing silicide phase with Ti. Whereas at lower annealing temperature, silicide becomes the dominant phase for decomposed Si atoms. However, N atoms react promptly with Ti and form TiN which appears as the majority phase for each of the studied annealing temperature. Further, the nitride and silicide phases across the films have been compared quantitatively for various annealing temperature and the maximum silicide formation is observed for the sample annealed at 780°C. Finally, the thermally anchored metal-substrate interaction mechanism can be exploited to fabricate disordered superconducting TiN films where TiSi2 and Si can be used to tune the level of disorder by altering the annealing temperature.

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“…Indeed, this compound exhibits a congruent melting at high temperature (1500°C), a low density (4.08 g.cm -3 ), a high modulus at room temperature (255.6 GPa) and excellent oxidation resistance [1,2]. The thermal and electrical conductivities are relatively high, making this compound attractive for electronic interconnection and diffusion barrier [3]. But this compound is very brittle and exhibits a low strength at high temperature.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic of liquid metal infiltration in TiC–SiC or SiC porous compacts

Roger

Salles

2019

Journal of Alloys and Compounds

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This work is the study of the reactivity during the capillary infiltration of liquid silicon or Si-Ti molten alloys in SiC or SiC+TiC compacts to form TiSi2/SiC composites. The main aim was to identify the thermodynamic and kinetic limitations of this process. Preliminary thermodynamic analyses of the equilibria in the Ti-Si-C system were performed to select the compositions of the liquid and the operating temperatures. Three cases were chosen: 1) infiltration of molten TiSi2 in pure SiC compacts at 1550°C, 2) reactive infiltration of pure liquid silicon in SiC+TiC compacts at 1450°C, and 3) reactive infiltration of the molten eutectic Ti0.16Si0.84 alloy in SiC+TiC compacts at 1380°C. The compacts were prepared from mixtures of micronic SiC (α or β polytypes) and TiC powders. The compositions of the powder mixtures were calculated to fill totally the porosity of the compacts of about 50% or with an excess of TiC. The heat treatments of the pellets at 1380, 1450 and 1550°C were performed with a holding duration of 1 h in high vacuum. Experimental results evidenced that the interactions between the liquid and the powders are complex. The obtained materials differ more or less from the expected composites that are generally not dense and contain variable quantities of free silicon. It is found that these experimental results can be explained by advanced thermodynamic calculations. This work proves that the activity gradients play a determining role during the infiltration process by initiating the dissolution and the diffusion of atoms in the liquids.

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Study of Oxidation of TiSi₂ Thin Film by XPS

Cited by 41 publications

References 16 publications

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study

Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy

Thermodynamic of liquid metal infiltration in TiC–SiC or SiC porous compacts

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Study of Oxidation of TiSi2 Thin Film by XPS

Cited by 41 publications

References 16 publications

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO2 Films: An In-Line XPS Study

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO2 Films: An In-Line XPS Study

Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy

Thermodynamic of liquid metal infiltration in TiC–SiC or SiC porous compacts

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Study of Oxidation of TiSi₂ Thin Film by XPS

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study

Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO₂ Films: An In-Line XPS Study