Study of p-type AlN-doped SnO2 thin films and its transparent devices

Wu, Yen‐Ju; Liu, Y.S.; Hsieh, Chih Yi; Lee, P.M.; Yu, Wei; Liao, Chun-Hao; Liu, C. Y.

doi:10.1016/j.apsusc.2014.12.028

Cited by 17 publications

(3 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Interestingly no linear curves passes through the origin. The similar results were observed by Koinkar et al [50] for diamond films deposited on silicon substrate and by Wu et al [51] in p-AlN-doped SnO 2 /n-type fluorine-doped SnO 2 thin films to study PeN junction in forward biased condition. This suggests that initially some amount of applied potential is utilized to turn-on the system.…”

Section: Electrical Properties (Vei Measurement)supporting

confidence: 85%

Studies of dense electronic excitation induced modification in cobalt doped SnO2 thin films prepared by RF sputtering technique

Jaiswal

Kumar

2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Electrical Properties (Vei Measurement)supporting

confidence: 85%

Studies of dense electronic excitation induced modification in cobalt doped SnO2 thin films prepared by RF sputtering technique

Jaiswal

Kumar

2015

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The P(I) intensities would be enhanced by the increase of the hole concentration of the ptype AlN-doped SnO 2 thin films. 26 Thus, as seen in the PL peaks in Figure 1 doped SnO 2 thin films is higher than that of the undoped SnO 2 thin film, which implies that the hole concentration of the AlNdoped SnO 2 thin film is higher than that of the undoped SnO 2 thin film. The P(II) peak at 390 nm is attributed to the electron transition from the defect states (i.e., oxygen vacancies) nearing the conduction band to the valence band, which corresponds to the donor-to-band transition.…”

Section: ■ Results and Discussionmentioning

confidence: 87%

“…P(I) located at about 340 nm (∼3.65 eV) is the band-to-band transition, which corresponds to the absorption edge of the transmittance curve. The P(I) intensities would be enhanced by the increase of the hole concentration of the p-type AlN-doped SnO 2 thin films . Thus, as seen in the PL peaks in Figure , the emission intensities of P(I) of the AlN-doped SnO 2 thin films is higher than that of the undoped SnO 2 thin film, which implies that the hole concentration of the AlN-doped SnO 2 thin film is higher than that of the undoped SnO 2 thin film.…”

Section: Resultsmentioning

confidence: 91%

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

et al. 2016

View full text Add to dashboard Cite

In this study, the Al3+–Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+–Sn4+ and N3––O2– substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP). The computational simulation shows that both Al and N impurity dopants generate an unoccupied band at the upper valence band maximum, which produces holes within the upper valence band region. Both Al3+–Sn4+ and N3––O2– substitution reactions contribute to the p-type conversion of AlN-doped SnO2 thin films. Annealing AlN-doped SnO2 (Al content is 14.65%) thin films at high-temperature (larger than 350 °C), N outgassing would occur and cause the p-type conduction of the annealed AlN-doped SnO2 thin films back to n-type conduction. Yet, in this work, we found that the Al3+–Sn4+ substitution reaction in the high Al-doping concentration of Al-doped and AlN-doped SnO2 (the Al content is between 29% and 33.2%) thin films would be activated considerably, as they are annealed at a temperature over 500 °C. With a higher Al-doping concentration (Al concentration is 33.2%) in the Al-doped SnO2 thin films, we found that the critical annealing temperature for the n-to-p conduction transition decreases to 500 °C. The Al dopants in the AlN-doped SnO2 thin films annealed at high annealing temperature not only stabilize the N3––O2– substitution reactions but also produce hole carriers by the Al3+–Sn4+ substitution reactions. The Al3+–Sn4+ substitution makes the AlN-doped SnO2 retain the p-type conduction in the high-temperature annealing.

show abstract

Metal Oxide Based Photoelectrodes in Photoelectrocatalysis: Advances and Challenges

Zhang

Lei

et al. 2022

ChemPlusChem

View full text Add to dashboard Cite

Metal oxide materials show promise for application in photoelectrocatalytic conversion due to their inherent advantages involving positive reactive surface, improved light absorption capability, efficient charge separation yield, and fast charge transport channels. The unique electrical and optical properties of metal oxide based photoelectrodes have a great effect on their performance in solar cells, photoelectrocatalysis, and photocatalysis. It has been reported that the presence of defects on grain boundaries, oxygen vacancy, doping strategy, and heterojunction play a vital role in both the efficiency and durability of their photoelectric application. However, the intrinsic mechanisms at the atomic level remained unclear, which require more in‐depth understanding in terms of theoretical analysis. In this Review, we emphatically introduce the recent advances and current challenges of metal oxide‐based photoelectrodes for photoelectrocatalytic application, beneath the structure‐activity relationship of metal oxide catalysts. Then, we give a summary of the state‐of‐the‐art research in the preparation and application for the metal oxide based composite materials. Finally, we discuss key aspects, which should be addressed for design and construction.

show abstract

Study of p-type AlN-doped SnO2 thin films and its transparent devices

Cited by 17 publications

References 40 publications

Studies of dense electronic excitation induced modification in cobalt doped SnO2 thin films prepared by RF sputtering technique

Studies of dense electronic excitation induced modification in cobalt doped SnO2 thin films prepared by RF sputtering technique

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

Metal Oxide Based Photoelectrodes in Photoelectrocatalysis: Advances and Challenges

Contact Info

Product

Resources

About