Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

Kastalsky, A.; Hwang, J.C.M.

doi:10.1016/0038-1098(84)90696-3

Cited by 91 publications

(31 citation statements)

References 6 publications

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“…The photoexcited electrons come either from the DX centers in the AlGaAs layer 14 or from the valence band of the bulk GaAs producing a charge separation at the interface. 15 Furthermore, the 2D electron concentration can be tuned within a large range using the method of continuous photoexcitation. 16 Population of the second subband of size quantization in a magnetic field has been observed in a number of experiments related to magneto-optical studies of the integer and fractional quantum Hall effects.…”

Section: Introductionmentioning

confidence: 99%

Electron-phonon scattering at the intersection of two Landau levels

2006

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We predict a double-resonant feature in the magnetic field dependence of the phonon-mediated longitudinal conductivity xx of a two-subband quasi-two-dimensional electron system in a quantizing magnetic field. The two sharp peaks in xx appear when the energy separation between two Landau levels belonging to different size-quantization subbands is favorable for acoustic-phonon transitions. One-phonon and two-phonon mechanisms of electron conductivity are calculated and compared. The phonon-mediated interaction between the intersecting Landau levels is considered and no avoided crossing is found at thermal equilibrium.

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Section: Introductionmentioning

confidence: 99%

Electron-phonon scattering at the intersection of two Landau levels

2006

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“…At first glance this is a surprising result because the Hall experiments should measure all electrons whereas the longitudinal resistance measurements probe only the 2DEG but these results agree well with the calculations of Kastalsky and Hwang which showed that their Hall experiments at low magnetic fields measure nearly exclusively the density and mobility of electrons in the 2DEG and not those in the parallel conducting channel. 11 This is because of the poor mobility of the electrons in the Si-doped region and the resulting high sheet resistance. Because the Hall measurements at low magnetic field do not ''see'' the electrons in the parallel conducting channel, their low mobility cannot explain the observed mobility decrease with the onset of parallel conductance.…”

Section: Resultsmentioning

confidence: 99%

“…Those high electron mobilities are achieved by employing thick spacer layers, resulting in moderate electron densities around 2ϫ10 11 cm Ϫ2 . In heterostructures with thinner spacer layers higher electron densities up to almost 1ϫ10 12 cm Ϫ2 can be realized [4][5][6][7][8][9][10][11] which is desirable for some applications, e.g., high electron mobility transistors. For those high electron densities, population of the second subband might occur.…”

Section: Introductionmentioning

confidence: 99%

Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities

Reuter

Versen

Schneider

et al. 2000

Journal of Applied Physics

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“…From detailed studies of the PPC it was concluded that two different mechanisms may be responsible for the observed properties in GaAs/AlGaAs heterostructures [8] :…”

Section: T-' ( K-' )mentioning

confidence: 99%

Persistent photoconductivity and properties of the Two‐Dimensional electron Gas in modulation‐doped GaInAs/AlInAs heterostructures after illumination

Saffian

Kraak

Oelze

et al. 1996

Physica Status Solidi (b)

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The properties of the two-dimensional electron gas (2DEG) in MBEgrown low carrier density Gao.47Ino.saAs/Alo.48Ino.52As heterostructures after illumination at low temperatures have been investigated. A strong persistent photoconductivity and drastic changes of low temperature electronic properties were observed. The pronounced changes of the quantum oscillations of the magnetoresistivity (Shubnikov-de Haas effect) and of the quantum Hall effect clearly reveal an important increase of both electron concentration and carrier mobility in the two-dimensional interface layer. The variations of the electronic properties are attributed to photoexcitation of electron-hole pairs in the GaInAs layer.Die Eigenschaften des zweidimensionalen Elektronengases (2DEG) wurden in MBEgewachsenen G~.~~I n~.~A s / A l~,~I~.~~A~H e t e r~t r u k t u r e n mit geringen Ladungstragerkonzentrationen nach Beleuchtung bei tiefen Temperaturen untersucht. Eine starke eingefrorene Photoleitfiihigkeit (PPC, persistent photoconductivity) und drastische Veranderungen der elektronischen Eigenschaften bei tiefen Temperaturen wurden beobachtet. Die deutlichen Veriinderungen in den Quantenoszillationen des Magnetowiderstandes (Shubnikov-de Haas-Effekt) und im Quanten-Hall-Effekt belegen eindeutig sowohl eine Erhiihung der Elektroncndichte, als auch der Ladungstragerbeweglichkeit in der zweidimensionalen Schicht am Heteroubergang. Die Variationen der elektronischen Eigenschaften werden mit einer lichtinduzierten Anregung von Elektron-Loch-Paaren in der GaInAs-Schicht erklart.

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Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

Cited by 91 publications

References 6 publications

Electron-phonon scattering at the intersection of two Landau levels

Electron-phonon scattering at the intersection of two Landau levels

Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities

Persistent photoconductivity and properties of the Two‐Dimensional electron Gas in modulation‐doped GaInAs/AlInAs heterostructures after illumination

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