Study of phosphorus-doped Si annealed by a multi-wavelength laser

Choi, Donghyeok; Shin, Jungyeop

doi:10.1016/j.rinp.2022.105632

Cited by 6 publications

(2 citation statements)

References 43 publications

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“…However, an exponential decrease in sheet resistance was observed when the samples were annealed by the laser. The decrease in sheet resistance by laser annealing has been previously [25] and recently [26] reported. These reported resistance values are similar but slightly higher than the values of this study.…”

Section: Analysis Of Sheet Resistancementioning

confidence: 73%

Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed

2022

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We report an in-depth analysis of phosphorus (P)-doped silicon (Si) with a continuous-wave laser source using a high scan speed to increase the performance of semiconductor devices. We systematically characterized the P-doped Si annealed at different laser powers using four-point probe resistance measurement, transmission electron microscopy (TEM), secondary-ion mass spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). Notably, a significant reduction in sheet resistance was observed after laser annealing, which indicated the improved electrical properties of Si. TEM images confirmed the epitaxial growth of Si in an upward direction without a polycrystalline structure. Furthermore, we observed the activation of P without diffusion, irrespective of the laser power in the secondary-ion mass-spectrometry characterization. We detected negligible changes in lattice spacing for the main (400) XRD peak, showing an insignificant effect of the laser annealing on the strain. AFM images of the annealed samples in comparison with those of the as-implanted sample showed that the laser annealing did not significantly change the surface roughness. This study provides an excellent heating method with high potential to achieve an extremely low sheet resistance without diffusion of the dopant under a very high scan speed for industrial applications.

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Section: Analysis Of Sheet Resistancementioning

confidence: 73%

Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed

2022

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“…Interestingly, in the case of the LPER (i.e., no poly grain boundaries) in Si channel extension, shown in Figure 4d, the regrown Si surface keeps a good flatness and does not impact the subsequent S/D epitaxy. Although the surface tension [91] induced on the top of the liquid Si may induce roughening of the regrown surface [92], a thick (tens of nanometers) dielectric capping layer deposited on the partially amorphized Si channel seems to help to avoid the degradation of the surface morphology. Therefore, one may suppose that a similar capping approach could work also for the Si LPC.…”

Section: Large Poly-si Grain Formation From Amorphous Si Thin Filmmentioning

confidence: 99%

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

et al. 2022

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The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional planar scaling. This new device architecture, in addition to the efforts required for extracting the best material properties, imposes a challenge of reducing the thermal budget of processes to be applied everywhere in CMOS devices, so that conventional processes must be replaced without any compromise to device performance. Ultra-violet laser annealing (UV-LA) is then of prime importance to address such a requirement. First, the strongly limited absorption of UV light into materials allows surface-localized heat source generation. Second, the process timescale typically ranging from nanoseconds (ns) to microseconds (μs) efficiently restricts the heat diffusion in the vertical direction. In a given 3D stack, these specific features allow the actual process temperature to be elevated in the top-tier layer without introducing any drawback in the bottom-tier one. In addition, short-timescale UV-LA may have some advantages in materials engineering, enabling the nonequilibrium control of certain phenomenon such as crystallization, dopant activation, and diffusion. This paper reviews recent progress reported about the application of short-timescale UV-LA to different stages of CMOS integration, highlighting its potential of being a key enabler for next generation 3D-integrated CMOS devices.

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Effect of rapid thermal annealing on photovoltaic properties of silicon solar cell fabricated by one-step laser doping in liquid

Hamoudi,

Ismail,

Al-Qayim

et al. 2023

Appl. Phys. A

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Study of phosphorus-doped Si annealed by a multi-wavelength laser

Cited by 6 publications

References 43 publications

Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed

Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed

Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices

Effect of rapid thermal annealing on photovoltaic properties of silicon solar cell fabricated by one-step laser doping in liquid

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