1997
DOI: 10.4028/www.scientific.net/msf.255-257.605
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Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons

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Cited by 6 publications
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“…In our previous studies [2,3] we emphasised the effect of the volume dependence of the annihilation rate when evaluating the PPA. Here we use the well known Brandt and Reinheimer formula [10] (λ = 2 + 134n_ (λ is in ns -1 and n-in atomic units, a.u.))…”
Section: Results For Sn-in Ahoysmentioning
confidence: 99%
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“…In our previous studies [2,3] we emphasised the effect of the volume dependence of the annihilation rate when evaluating the PPA. Here we use the well known Brandt and Reinheimer formula [10] (λ = 2 + 134n_ (λ is in ns -1 and n-in atomic units, a.u.))…”
Section: Results For Sn-in Ahoysmentioning
confidence: 99%
“…To examine the PPA in the Sn-In system, we performed a set of theoretical calculations at a constant atomic volume [2]. Here we choose the Sn atomic volume and expect that the results obtained are very similar for other volumes as the dependence of the volume on the concentration is rather weak (see the inset in Fig.…”
Section: Results For Sn-in Ahoysmentioning
confidence: 99%
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