Study of post annealing influence on structural, chemical and electrical properties of ZTO thin films

Jain, Vipin; Kumar, Mahesh; Jain, Prerna; Bhandari, Deepika; Vijay, Y.K.

doi:10.1016/j.jallcom.2010.10.212

Cited by 45 publications

(22 citation statements)

References 22 publications

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“…Transparent and conducting oxides (TCO) such as zinc oxide (ZnO), tin dioxide (SnO 2 ) and zinc tin oxide (ZTO) have been studied and technologically used in the last years due to their good optical and electrical properties (high transmittance and large band gap energy, Eg > 3 eV), earth abundance and non-toxicity [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Comparative study on structural, morphological and optical properties of Zn2SnO4 thin films prepared by r.f. sputtering using Zn and Sn metal targets and ZnO–SnO2 ceramic target

Mereu

Donne

Trabattoni

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Comparative study on structural, morphological and optical properties of Zn2SnO4 thin films prepared by r.f. sputtering using Zn and Sn metal targets and ZnO–SnO2 ceramic target

Mereu

Donne

Trabattoni

et al. 2015

Journal of Alloys and Compounds

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“…Figure 6(a) shows the XPS narrow scan spectra for the Zn 2p 3/2 on the surface of the ZTO thin film. The Zn 2p 3/2 peak is fitted with two components, one at 1021.9 eV and latter at 1023.5 eV can be attributed to the Zn O and Zn O Sn related contribution, respectively [15]. As shown in Fig.…”

Section: Resultsmentioning

confidence: 88%

Dry Etch Properties of ZTO Thin Films Using Inductively Coupled Plasma

et al. 2013

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In this study, we investigated the surface reaction of zinc tin oxide (ZTO) thin films at N 2 /BCl 3 /Ar plasma. The maximum etch rate of 136 nm/min for the ZTO thin films was obtained at N 2 /BCl 3 /Ar (3/6/14 sccm) gas mixing ratio. The etch conditions were the RF power of 600 W, the DC-bias voltage of -150 V, the process pressure of 2 Pa, and the substrate temperature of 40 • C. Corresponding to these etching conditions, chemical reaction of the etched ZTO surface has been studied by x-ray photoelectron spectroscopy measurement to investigate the chemical reactions between the surfaces of ZTO thin film and etch species. Surface morphology of the etched ZTO thin films was characterized using atomic force microscope.

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“…Figure 1 shows XRD patterns of a ZTO single layer and In2O3/ZTO double-active layer with 0.01 M and 0.2 M In2O3. The trace peaks at approximately 32 o , 44 o and 56 o 2θ were assigned to the (220), (322), and (430) orientations in ZTO, respectively [13]. The peak at 54 o 2θ was assigned to the Si/SiO2 wafer substrate [14].…”

Section: Resultsmentioning

confidence: 99%