Study of Process Variations on f t in 30 nm Gate Length FinFET Using TCAD Simulations

Abstract

Abstract. This paper investigates the effect of process variations on unity gain frequency (f t ) in 30 nm gate length FinFET by performing extensive 3D TCAD simulations. TCAD tools are used to study device sensitivities on process variations. Sensitivity of f t on five different process parameters is studied. It is found that f t is more sensitive to gate length, underlap and corner radius, and less sensitive to hardmask height. Sensitivity of f t to fin width depends upon channel doping levels.

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