Study of Properties of Multicomponent Heterostructures Based on A^IIIB^V Compounds

Abstract

Complex analysis of the quality of the surface of the multicomponent epitaxial layers AIIIBV compounds grown at the different conditions of temperature gradient zone recrystallization was performed. Main parameters that determine the quality of the surface and structural perfection of multicomponent heterostructures AlInGaPAs / GaAs have been found: the temperature gradient, the composition of the solution-melt, subcooling, matching the lattice parameters and the CTE of the layer and the substrate, the substrate orientation.

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

“…This approach allows us to represent solutions of the Schrödinger equations in the form of two transcendental equations. (4,5). ( 4) (5) where K, Q, β are local wave vectors.…”

“…Currently, researchers make various attempts to increase the efficiency of photoconverters: the use of multicomponent solid solutions that make it possible to vary the width of the bandgap in wide limits [1][2][3][4], improve growth processes [5][6][7]. A promising direction is the use of heterostructures with quantum-size objects [8][9][10].…”

Growing of AlInGaAsP Solid Solutions on InP Substrates for Photovoltaic Converters

“…Isoparametric solid solutions of A 3 B 5 compounds have the necessary characteristics for the creation on their basis of high-efficiency optoelectronic devices [1,2]. The use of three-and fourcomponent A 3 B 5 solid solutions makes it possible to create devices for optoelectronics in a wide spectral range.…”