Study of radiation resistance property of a — IGZO thin film transistors

Dayananda, G. K; Shantharama, C.; Jayarama, A; Kim, Hyun Jae

doi:10.1109/rteict.2016.7808148

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Additionally, it is observed that the shifts magnitude of the mobility is independent of the irradiation fluence. The observed decrease of both I D and µ FE , as well as the increase of V th can be explained by the formation of both oxygen interstitial and zinc vacancy acceptor defects, caused by the exposition to high energy electrons, as well as by charge trapping at the gate/dielectric [29], [30].…”

Section: B Electron Irradiation Effectsmentioning

confidence: 95%

Flexible IGZO TFTs and Their Suitability for Space Applications

Costa

Pouryazdan

Panidi

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to 10 12 e − /cm 2 , low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to e − irradiation are found to shift by +(0.09 ± 0.05) V and −(0.6 ± 0.5) cm 2 V −1 s −1 . Subsequent low temperature exposure resulted in additional shifts of +0.38 V and −5.95 cm 2 V −1 s −1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits.INDEX TERMS Flexible electronics, space applications, amorphous oxides, wearables, thin film transistors.

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Section: B Electron Irradiation Effectsmentioning

confidence: 95%

Flexible IGZO TFTs and Their Suitability for Space Applications

Costa

Pouryazdan

Panidi

et al. 2019

IEEE J. Electron Devices Soc.

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“…The observed decrease of both ID and µFE, as well as the increase of Vth can be explained by the formation of both oxygen interstitial and zinc vacancy acceptor defects, caused by the exposition to high energy electrons, as well as by charge trapping at the gate/dielectric. [17], [18].…”

Section: B Electron Irradiation Effectsmentioning

confidence: 99%

Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

Costa

Pouryazdan

Panidi

et al. 2018

2018 48th European Solid-State Device Research Conference (ESSDERC)

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In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 12 e-/cm 2 and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to eirradiation are found to shift by +0.09 ± 0.05V and-0.6 ± 0.5cm 2 V-1 s-1. Subsequent low temperature exposure resulted in additional shifts of +0.38 V and-5.95 cm 2 V-1 s-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into spacesuits .

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“…Current research indicates that amorphous materials have a more flexible atomic bond structure compared to crystalline silicon, and their structural plasticity leads to easy defect reconstruction, with the potential to achieve large-scale scalable radiation resistance [13]. The research on the radiation effects of IGZO TFT for space applications is also actively advancing, and preliminary results have been achieved [14][15][16][17][18][19][20]. In addition, the stable operating temperature range of commercial integrated circuits (ICs) is usually between 25-85 • C (298-358 K).…”

Section: Introductionmentioning

confidence: 99%

Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K

Wang,

Bi,

et al. 2024

Electronics

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The effect of high- and low-temperature conditions on the performance of IGZO TFT and logic circuits were investigated in this work. In the temperature range of 250−350 K, the performance of the IGZO TFT did not show significant changes and exhibited a certain degree of high- and low-temperature resistance. When the temperature was below 250 K, as the temperature decreased, the threshold voltage (VTH) of the IGZO TFT significantly increased, the field effect mobility (μFE) and the on state current (ION) significantly decreased. This is attributed to the lower excitation degree of charge carriers at extremely low temperatures, resulting in fewer charge carriers transitioning to the conduction or valence bands, and the formation of defects also limits carrier migration. When the temperature exceeded 350 K, as the temperature increased, more electrons could escape from the bandgap trap state and become free charge carriers, and the IGZO layer was thermally excited to produce more oxygen vacancies, resulting in higher μFE and lower VTH. In addition, the drain current noise spectral density of IGZO TFT conformed to the 1/ƒ noise characteristic, and the degradation mechanism of IGZO TFT over a wide temperature range was confirmed based on the changes in noise spectral density at different temperatures. In addition, an inverter logic unit circuit was designed based on IGZO TFT, and the performance changes over a wide temperature range were analyzed. This lays the foundation for IGZO TFT to be applied in integrated circuits with harsh environments.

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Study of radiation resistance property of a — IGZO thin film transistors

Cited by 5 publications

References 5 publications

Flexible IGZO TFTs and Their Suitability for Space Applications

Flexible IGZO TFTs and Their Suitability for Space Applications

Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K

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