Study of Reverse Recovery Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes

Abstract

kV 600 A 4H-SiC flat package type pn diodes have been developed and their reverse recovery characteristics have been investigated. In spite of pn junction diodes, the developed diodes have a short reverse recovery time of 0.153 µs at room temperature. This diodes have 1/10th lower recovery loss and 1/3rd lower recovery time than those of a commercialized 2.5 kV Si diode in spite of high blocking voltage. When this diodes apply to PWM inverter, the carrier frequency that on-state loss is equal to switching loss is 1.45 times the Si diode's frequency at 398 K. By using the developed diode, high voltage high frequency inverter operation can be realized.SiC pn