Study of RF-MEMS Capacitive Shunt Switch for Microwave Backhaul Applications

Shah, Dharti Raj

doi:10.9790/2834-1201035765

Cited by 8 publications

(1 citation statement)

References 16 publications

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“…In the 1970s, MEMS has been used for pressure and temperature sensors, accelerometers, gas chromatographs, sensor devices, and MEMS switches for low‐frequency applications. Both microwave and radio frequencies are used in switching purpose in MEMS switch; this is known as radiofrequency (RF) switch . MEMS switches play a major role in RF and microwave communication systems due to high linear characteristics and low power consumption which made these switches better than conventional GaAs FET and PIN diode .…”

Section: Introductionmentioning

confidence: 99%

Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch

Sravani

Babu

Ramesh

et al. 2019

Int J Numerical Modelling

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This paper presents a novel radiofrequency micro‐electro‐mechanical systems (RF MEMS) shunt capacitive switch having high isolation and low insertion loss for microphone applications. The device optimization and various electromechanical analysis are performed using a finite element modeler (FEM) solver. The proposed switch results in a pull‐in voltage of 36.88 V to displace movable beam 2/3rd of its initial gap. By varying beam material, dielectric material, beam‐dielectric thickness, and air gap between movable beam and dielectric layer, various electromechanical and electromagnetic analyses are carried out. For better isolation, silicon nitride (Si3N4) is used for the dielectric layer than hafnium oxide (HfO2) and silicon carbide (SiC). To achieve maximum displacement of the beam, various materials such as aluminum, gold, nickel, and copper are chosen; among all, this gold shows high displacement because of its good conductivity. By implementing various meandering techniques along with perforations, pull‐in voltage and stiction problems are reduced. The switch exhibits good return loss of −28 dB and insertion loss of −0.017 dB during on‐state at 5 GHz and high isolation of −41.26 dB at 10.5 GHz during off‐state. The proposed switch is used at the subsystem/device level in the future microphone, aircraft navigation, and satellite applications.

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Section: Introductionmentioning

confidence: 99%