Study of room temperature ferromagnetic and ferroelectric properties in α-Fe1.6Ga0.4O3 alloy

Lone, Abdul Gaffar; Bhowmik, R.N.

doi:10.1016/j.jmmm.2014.12.020

Cited by 25 publications

(18 citation statements)

References 37 publications

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“…In Ga doped hematite system, we noted a good signature of ferroelectricity in the nearby composition (α-Fe 1.6 Ga 0.4 O 3 ) and prepared by mechanical alloying. 7 However, some differences in the properties of chemical routed and mechanical alloyed samples may be pointed out. The mechanical alloyed sample is nearly 2-3 orders less conductive than the chemical routed sample.…”

Section: Summary Of the Results And Discussionmentioning

confidence: 99%

“…[5][6][7] The ferromagnetic enhancement in Ga doped α-Fe 2 O 3 occurs due to modified spin structure and superexchange interactions in rhombohedral planes of the crystal structure. Electrically, hematite is a charge-transfer type semiconductor with band gap ∼ 2.2 eV and non-suitable for spintronics applications due to its low electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

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Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Bhowmik

Vijayasri

2015

AIP Advances

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We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

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Section: Summary Of the Results And Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Bhowmik

Vijayasri

2015

AIP Advances

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“…structure by alloying of a-Fe 2 O 3 and β-Ga 2 O 3 has modified optical band gap, ferromagnetic, electronic and magneto-electronic properties [9,[11][12].…”

Section: Introductionmentioning

confidence: 99%

“…The enhanced ferromagnetism and magnetic exchange bias effect has provided the experimental evidence of modified spin order (core-shell structure) and magnetic anisotropy in AFMNP [2][3][4]. From application point of view, increase of ferromagnetic (FM) component in AFMNP is important for the development of magnetic semiconductor with reasonably large ferromagnetic moment, tunable band gap in the UV-Vis range of light and electrical field controlled electronic properties at room temperature [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Bhowmik

Siva

Ranganathan

et al. 2017

Journal of Magnetism and Magnetic Materials

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The samples of Ga doped Cr 2 O 3 oxide have been prepared using chemical co-precipitation route.X-ray diffraction pattern and Raman spectra have confirmed rhombohedral crystal structure with space group R3 C. Magnetic measurement has indicated the dilution of antiferromagnetic (AFM) spin order in Ga doped α-Cr 2 O 3 system oxide, where the AFM transition temperature of bulk α-Cr 2 O 3 oxide at about 320 K has been suppressed and ferrimagnetic behavior is observed from the analysis of the temperature dependence of magnetization data below 350 K. Apart from Ga doping effect, the spin freezing (50 K-70 K) and superparamagnetic behavior of the surface spins at lower temperatures, typically below 50 K, have been exhibited due to nano-sized grains of the samples. All the samples showed non-linear current-voltage (I-V) characteristics. However, I-V characteristics of the Ga doped samples are remarkably different from α-Cr 2 O 3 sample. The I-V curves of Ga doped samples have exhibited many unique electronic properties, e.g., bi-stable (low resistance-LR and high resistance-HR) electronic states and negative differential resistance (NDR). Optical absorption spectra revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. 2 Key Words: Magnetic semiconductor; tuning of band gap; negative differential resistance; I-V loop, bi-stable electronic state.

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Effect of Al+3 substitution on optical, magnetic, and ferroelectric properties of hematite (α-AlxFe2−xO3) nanostructures

Irshad,

Want

2024

Appl. Phys. A

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Study of room temperature ferromagnetic and ferroelectric properties in α-Fe1.6Ga0.4O3 alloy

Cited by 25 publications

References 37 publications

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Effect of Al+3 substitution on optical, magnetic, and ferroelectric properties of hematite (α-AlxFe2−xO3) nanostructures

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