Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity

Qiu, Jijun; Weng, Binbin; Yuan, Ziming; Shi, Zhisheng

doi:10.1063/1.4794492

Cited by 87 publications

(71 citation statements)

References 19 publications

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“…Additionally, there are no peaks corresponding to the precipitation of any compounds or binary alloys. [16][17][18] The calculated experimental interplanar distances d khl are shown in Table I. They are very close to the standard data for bulk crystals.…”

Section: Resultssupporting

confidence: 61%

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Virt

Rudyi

Lopatynskyi

et al. 2016

Journal of Elec Materi

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Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al 2 O 3 ) and on Si covered with a Si 3 N 4 buffer layer. The Si 3 N 4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si 3 N 4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

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Section: Resultssupporting

confidence: 61%

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Virt

Rudyi

Lopatynskyi

et al. 2016

Journal of Elec Materi

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“…As a result, peak detectivity of 2.8×10 10 cmHz 1/2 /W was achieved at room temperature. [12] Further effort has led to an improved peak detectivity of 4.2×10 10 cmHz 1/2 /W. [13] To our best knowledge, this is the highest detectivity at this wavelength at room temperature.…”

Section: Uncooled Photoconductive Pbse Detectorsmentioning

confidence: 97%

Recent development on the uncooled mid-infrared PbSe detectors with high detectivity

et al. 2013

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Polycrystalline lead salt photoconductive (PC) detectors have been widely used for applications in the 1-5μm spectral range because of their low cost, room temperature operation and high detectivity. However, the physical mechanism of such detectors had not been un-ambiguously understood. In order to improve the performance, we proposed a charge separation junction (CSJ) model to analyze and guide our material synthesis process, which has led to PbSe PC detectors with record high detectivity. On the other hand, the performance of photovoltaic (PV) detectors using Pb-salt epitaxial films on Si substrates has been limited by their high defect density even though the ideal performance of the PbSe PV detector was theoretically proven to be higher than the most popular HgCdTe PV detectors at near room temperature, due to its low Auger recombination property. Inspired by the high material quality of self-assembled lead salt microcrystals, we developed a novel method to produce PV detectors using PbSe micro-crystals based on our studies on the PC detector research that showed promising preliminary results.

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“…b. Landauer model of transport, where the net current density is given by the difference of right and left moving carriers over the barrier. [22], particularly on sensitized P bSe which discusses the role of charge depletion in the crystallites on enhancing the lifetime of the majority carriers [23], [24], which is reflected in high sensitivity of these films. These workers have also noted recently that the films have complex chemistry with a mix of varied species of P b, Se, O present in their films [25], which hints back to classic explanation of high sensitivity by Humphrey [26] and Slater [27] in terms of trapping of minority carriers in the inter-crystallite regions.…”

Section: Lifetimementioning

confidence: 99%

A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors

Ganguly

Jang

Tan

et al. 2019

Journal of Applied Physics

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We present a physics based multiscale materials-to-systems model for polycrystalline P bSe photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted P bSe|P bI 2 interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the I −V relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity R and specific detectivity D * intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications. arXiv:1806.02933v1 [cond-mat.mes-hall]

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Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity

Cited by 87 publications

References 19 publications

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

Recent development on the uncooled mid-infrared PbSe detectors with high detectivity

A multiscale materials-to-systems modeling of polycrystalline PbSe photodetectors

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