Study of Silicon Dioxide Nanowires Grown via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

Abstract

Silica nanowires are usually synthesized by means of vapor liquid solid method with metal catalyst introduced at the top which will unambiguously affect the excellent light emission properties of silica nanowires in optoelectronic devices and optical signal sensors. In this study, silicon dioxide nanowires without traces of catalyst are grown via rapid thermal annealing of magnetron sputtered amorphous carbon film doped with silicon. These high density silicon dioxide nanowires were amorphous with a length longer than 20 m and a diameter of 30-140 nm. Detailed morphology and microstructure analysis are conducted with field emission scanning electron microscopy and high resolution transmission electron microscopy. Graphitization of carbon and oxidation of silicon during rapid thermal annealing were revealed by Raman and X-ray photoelectron spectroscopy. This study indicates that high growth rate of >6 m/min of high purity silicon dioxide nanowire is possible simply by sputtering followed by rapid thermal annealing and an additional heating treatment.

Synthesis temperature dependence of morphologies and properties of cobalt oxide and silicon nanocrystals

“…The hysteresis curves in Figs. 6(a) and Owing to their application potential in optoelectronic devices, 1-D nanostructures, such as nanorods and nanowires, have attracted a lot of interests from researchers [50][51][52]. Vapor-phase synthesis methods are generally used to fabricate such structures.…”

First-Principles Structural and Electronic Characterization of Ordered SiO2Nanowires

“…Basic structural measurements of a nanowire can include its diameter as well as its length. These parameters may be related to laboratory preparation of nanowires. − At the atomistic level, a characteristic parameter would be an average bond length. Accordingly, Table provides the calculated average diameter estimated from the most external radially opposite Si atoms, D̂ Si , the average diameter estimated from the most external radially opposite O atoms, D̂ O , and the average Si–O bond-distance, d̂ Si–O , in all the bulk-based and rutile-based SiO 2 nanowires.…”

“…Thick SiO 2 nanowires have been synthesized. 15,16 However, to our knowledge, few theoretical studies of SiO 2 nanowires have been performed, and only for very thin nanowires. 17,18 We here present density functional calculations of the atomic and electronic structure of SiO 2 nanowires as a function of nanowire thickness.…”

“…What must be accomplished now is to completely characterize the underlying SiO 2 nanowires, because their properties may affect the overlying RuO 2 material. Thick SiO 2 nanowires have been synthesized. , However, to our knowledge, few theoretical studies of SiO 2 nanowires have been performed, and only for very thin nanowires. , We present density functional calculations of the atomic and electronic structure of SiO 2 nanowires as a function of nanowire thickness. An analysis of the electronic density of states, electrical character, electron density, charge transfer, and chemical bonding is presented.…”

Understanding the growth of amorphous SiO2nanofibers and crystalline binary nanoparticles produced by laser ablation

“…SiO x nanowires can be synthesized in different ways, including chemical vapor deposition (CVD), laser ablation, thermal evaporation, sol-gel, thermal-carbon reduction, flame spray pyrolysis, ion implantation and water-assisted synthesis under supercritically hydrothermal conditions [20][21][22][23][24][25][26][27].…”