Study of silicon-doped VGF-GaAs by DSL-etching and LVM spectroscopy and the influence of B2O3 coating

Hannig, Christian; Schwichtenberg, G.; Buhrig, E.; Gärtner, G.

doi:10.1016/s0921-5107(99)00092-6

Cited by 13 publications

(4 citation statements)

References 16 publications

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“…[9], is parallel to a /1 1 0S-direction within the (0 0 1)-plane. This dislocation type was reported by some authors for VGF [9,10] and other growth methods [6,[11][12] .…”

Section: Introductionsupporting

confidence: 76%

“…For low EPD Si-doped GaAs, a cross-like arrangement of etch pits along the crystallographic directions [1 0 0] and [0 1 0] on (0 0 1)-oriented wafers is very common [9,10]. In some cases, this cross extends over the full diameter of the wafer.…”

Section: Introductionmentioning

confidence: 99%

“…A second characteristic dislocation arrangement is reported for the wafer centre [10,13], where the dislocations form walls along the directions [1 1 0] and ½1 1 0:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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“…[9], is parallel to a /1 1 0S-direction within the (0 0 1)-plane. This dislocation type was reported by some authors for VGF [9,10] and other growth methods [6,[11][12] .…”

Section: Introductionsupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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“…Due to the exchange reaction 2B 2 O 3 þ 3Si # 3SiO 2 þ 4B, silicon added to the melt will be partly incorporated into boron oxide, whereas boron pollutes the melt [158]. Due to the exchange reaction 2B 2 O 3 þ 3Si # 3SiO 2 þ 4B, silicon added to the melt will be partly incorporated into boron oxide, whereas boron pollutes the melt [158].…”

Section: Doping and Segregationmentioning

confidence: 99%

Vertical Bridgman Growth of Binary Compound Semiconductors

Jurisch

Eichler

Bruder

2015

Handbook of Crystal Growth

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Boron Site Distribution in Doped GaAs

Pätzold

Gärtner

Irmer

2002

phys. stat. sol. (b)

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The lattice site distribution of boron in doped, melt-grown GaAs was studied by means of photoluminescence and local vibrational mode spectroscopy. The investigated samples were cut from nominally Si or Ge doped crystals grown under stoichiometric or Ga rich conditions. In GaAs : Si boron behaves like an amphoteric dopant. The formation of the antisite, B As , is favoured by the growth from a Ga rich melt. In Ge doped GaAs, on the other hand, only the isovalent boron defect, B Ga , was observed. Apart from infrared absorption spectra measured by the established Fourier transform technique the B As -related radiative recombination and the local Raman modes of the boron species are presented. These results demonstrate, that photoluminescence and near infrared Raman spectroscopy are viable tools for the detection of substitutionally incorporated boron in GaAs.

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Study of silicon-doped VGF-GaAs by DSL-etching and LVM spectroscopy and the influence of B2O3 coating

Cited by 13 publications

References 16 publications

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Vertical Bridgman Growth of Binary Compound Semiconductors

Boron Site Distribution in Doped GaAs

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