2022
DOI: 10.1116/6.0001841
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Study of simulations of double graded InGaN solar cell structures

Abstract: The performances of various configurations of InGaN solar cells are compared using nextnano semiconductor simulation software. Here, we compare a flat base-graded wall GaN/InGaN structure, with an In xGa1− xN well with sharp GaN contact layers, and an In xGa1− xN structure with In xGa1− xN contact layers, i.e., a homojunction. The doping in the graded structures is the result of polarization doping at each edge (10 nm from each side) due to the compositional grading, while the well structures and homojunctions… Show more

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