Study of Single Event Upsets in different double gate FinFET based SRAM topologies

Abstract

Soft errors also known as Single Event Upsets (SEU) is a term that defines the non-permanent errors caused in microelectronic circuits when high energy particles strike at the sensitive regions of the devices. In this paper, independently driven double gate (IDDG) FinFET and simultaneously driven double gate (SDDG) FinFET based 6T-SRAM cells are studied for their soft error performance. Ten different topologies, nine IDDG based topologies namely Flex-V TH , Flex PG, PG-SN, PG-OSN, Flex PD, Flex PU, Flex-cell, Flex PUPG, Flex PDPG and one SDDG based topology are studied to find out the minimum dose required to flip the value stored in the SRAM cell using TSPICE simulations with 45 nm PTM model. Flex-PG and PG-OSN are having better immunity to radiation and a critical dose value of 1.18 MeV-cm 2 / mg.

Evolution of radiation-induced soft errors in FinFET SRAMs under process variations beyond 22nm

“…The transient current induced by that particle hit in a circuit node can be modeled with a double exponential pulse [9], [10], following equation 3, where τ 1 and τ 2 are the rise and fall timing constants, dependent on the particle and the technology, and Qcoll is the amount of charge collected by the circuit. According to [11], the induced current pulses caused by neutron particles take around 80 ps in the predictive FinFET technologies we use.…”