Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy

Feklisova, O. V.; Yakimov, E. E.; Yakimov, E. B.

doi:10.1063/5.0004423

Cited by 6 publications

(3 citation statements)

References 38 publications

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“…As discussed above, it is widely accepted that this driving force is provided by QWA [6,9,18,[34][35][36]. However, a calculation shows that for the binding energy of 0.213 eV [48] and the equilibrium carrier concentration the energy gain due to the electron capture into SSFs is insufficient to exceed the SSF formation energy and to provide the driving force even if the recent value for the SSF formation energy of 4.7 mJ m −2 [20] is used. The same conclusion was also made in [36,49], in which it was shown that the threshold carrier density at room temperature was higher than 10 17 cm −3 that contradicts the numerous experimental results.…”

Section: Discussionmentioning

confidence: 99%

Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

Yakimov¹,

Yakimov²

2022

J. Phys. D: Appl. Phys.

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The effect of e-beam irradiation in the local and scan modes on the stacking fault expansion in 4H-SiC has been studied. It is shown that the distance, at which the e-beam affects the glide of partial dislocations driving the stacking fault expansion, does not exceed 10-12 μm. The dislocations were found to glide as straight lines with a velocity independent of their length, even when this length essentially exceeds the size of excitation volume. The irradiation at fixed points allows to separate the excess carrier effects on the kink formation and kink migration. The results obtained were explained under an assumption that the irradiation is necessary only to stimulate the kink pair formation and then the kinks can migrate without any excitation. That could mean that the barrier for the kink migration along Si-core 30° partial dislocations in 4H-SiC is very small.

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Section: Discussionmentioning

confidence: 99%

Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

Yakimov¹,

Yakimov²

2022

J. Phys. D: Appl. Phys.

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“…Although the energy level of 'C' points to a Ti peak according to [20], an origin related to an impurity is contradicted by the appearance of 'C' only after irradiation for DUT 3. Interestingly, a DLTS peak with similar parameters ([EV + Ea] = 0.213 ± 0.005 eV, 𝜎 𝑝 = 7 × 10 −15 cm 2 ) to the 'C' peak has been found in [21] and attributed to single-layer Shockley-type stacking faults. Further investigation is needed to establish whether the 'C' peak originates from extended defects.…”

Section: Arrhenius Analysismentioning

confidence: 70%

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Für

Belanche

Martinella

et al. 2023

IEEE Trans. Nucl. Sci.

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Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analysed and compared to devices showing or not signatures of Single Event Leakage Current (SELC) degradation. An additional peak labelled 'C' with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.

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“…Another type of SFs was in-grown SFs, which were produced during epitaxial growth and had no relationship with substrate quality. At present, most epitaxial SFs belong to the second type, and most of these faults were Shockley SFs, which are generated by sliding in the basal plane [111][112][113][114]. On one hand, Frank-type SFs were created by the addition or removal of Si-C bilayers, which typically generated due to polycrystalline instability at the initial growth stage, while Shockley-type SFs referred with the C-core and Si-core dislocations were originated from the depolymerization of BPDs.…”

Section: Plane Defectsmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

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Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy

Cited by 6 publications

References 38 publications

Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

Advances and challenges in 4H silicon carbide: defects and impurities

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