Study of SiO2/Si Interface by Surface Techniques

Ghita, R. V.; Logofatu, C.; Negrila, Catalin-Constantin; Ungureanu, F.; Cotirlan, C.; Manea, Adrian-Stefan; Lazarescu, M.F.; Ghica, Corneliu

doi:10.5772/23174

Cited by 36 publications

(41 citation statements)

References 20 publications

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“…Gallium arsenide is one of the most popular semiconductors that has intrinsic electrical properties superior to silicon, such as a direct energy gap, higher electron mobility, a high breakdown voltage, chemical inertness, mechanical stability, and lower power dissipation [25,26]. These advantages of gallium arsenide are attractive to experimentally investigate the influence of illumination intensity and temperature on the electrical characteristics of Al/p-GaAs/In structure.…”

Section: Introductionmentioning

confidence: 99%

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

Soylu

Al-Ghamdi

Yakuphanoğlu

2012

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

Soylu

Al-Ghamdi

Yakuphanoğlu

2012

Microelectronic Engineering

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“…The discussions regarding surface composition are related in this work with the As 2p 3/2 and Ga 2p 3/2 signals in native oxides and subsequent changes related to different etching processes. As presented [22] the C 1s peak shape has predominant contribution from C-C bond on the surface with binding energy (BE = 285 eV) that As can be observed in Figure 6 the as-received surface of n-GaAs is covered by a conglomerate of Ga 2 O 3 and As 2 O 3 , determining on the surface a roughness characteristic of RMS ~ 0.21 nm.…”

Section: Initial Stage Of the Iii-v Semiconductor Surface-presence Ofmentioning

confidence: 75%

Surface Modification of III-V Compounds Substrates for Processing Technology

Ghita¹,

Logofatu²,

Negrilǎ³

et al. 2017

Nanoscaled Films and Layers

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Semiconductor materials became a part of nowadays life due to useful applications caused by characteristic properties as variable conductivity and sensitivity to light or heat. Electrical properties of a semiconductor can be modified by doping or by the application of electric fields or light; and from this view, devices made from semiconductors can be used for amplification or energy conversion. The compound semiconductor materials from III-V class experienced a qualitative leap from promising potential to nowadays technologic environment. The III-V semiconductor compounds are the material bases for electronic and optoelectronic devices such as high-electron-mobility transistors (HEMT), bipolar heterostructure transistors, IR light-emitting diodes, heterostructure lasers, Gunn diodes, Schottky devices, photodetectors, and heterostructure solar cells for terrestrial and spatial operating conditions. Among III-V semiconductor compounds, gallium arsenide (GaAs) and gallium antimonide (GaSb) are of special interest as a substrate material due to the lattice parameter match to solid solutions (ternary and quaternary) whose band gaps cover a wide spectral range from 0.8 to 4.3 μm in the case of GaSb. The solid/ solid interfaces could play a key part in the development of microelectronic device technology. In most of the cases, the initial surface of III-V compounds exposed to laboratory conditions is covered usually with native oxide layers. Various techniques for performing the surface cleaning process are used, e.g., controlled chemical etching, in situ ion sputtering, coupled with controlled annealing in vacuum and often these classic techniques are combined in order to prepare an eligible semiconductor surface to be exposed to a technological device chain. The evolution of surface native oxides in different cleaning procedures and the characteristics of as-prepared semiconductor surface were investigated by modern surface investigation techniques, i.e., X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) combined with electrical characterization. Surface preparation of semiconductors in particular for III-V compounds is a necessary requirement in device technology due to the existence of surface impurities and the presence of native oxides. The impurities can

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“…As depicted in Figure 2b, the two Si 2p peaks are located at 103.5 and 104.4 eV, respectively, and can be related to Si–O bonds. 20,21 The N 1s spectrum (Figure 2c) is divided into four individual peaks centered at 398.5, 400.2, 401.3, and 404.6 eV, corresponding to pyridinic-N, pyrrolic/pyridone-N, quaternary-N, and pyridine- N -oxide, respectively. 22−25 Due to the approximate bond lengths of C–C and C–N, pyridinic-N and quaternary-N can have a slight influence on the carbon matrix structure.…”

Section: Resultsmentioning

confidence: 99%

Economic and High Performance Phosphorus–Carbon Composite for Lithium and Sodium Storage

Wang²,

Wang³

et al. 2017

ACS Omega

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Porous carbon derived from rice hulls has potential for application in phosphorus–carbon composites as high capacity anode materials for lithium-ion and sodium-ion batteries. The native composition of rice husks produces a porous carbon with a unique doped structure, as well as an efficient pore and channel structure, which may facilitate high and stable lithium storage. After cycling for over 100 cycles, the composite delivered a capacity of about 1293 mAh g –1 , as well as a coulombic efficiency of nearly 99% at the current density of 130 mA g –1 with a capacity density of 1.43 mAh cm –2 . High specific discharge capacities were maintained at different current densities (∼2224, ∼1895, ∼1642, and ∼1187 mAh g –1 composite at 130, 260, 520, and 1300 mA g –1 , respectively). This study may offer a golden opportunity to change the humble fate of rice hulls, and also pave the way toward successful battery application for phosphorus–carbon composite anode materials.

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Study of SiO2/Si Interface by Surface Techniques

Cited by 36 publications

References 20 publications

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

Surface Modification of III-V Compounds Substrates for Processing Technology

Economic and High Performance Phosphorus–Carbon Composite for Lithium and Sodium Storage

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