Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

Currás, E.; Campderros, J. Duarte; Fernández, M.; García, Adolfo Cobo; Gómez, G.; González, J.; Jaramillo, R.; Moya, D.; Vila, I.; Hidalgo, S.; Manna, M.; Pellegrini, G.; Quirion, D.; Pitzl, D.; Ebrahimi, A.; Wiederkehr, S. A.

doi:10.1016/j.nima.2019.04.037

Cited by 6 publications

(5 citation statements)

References 7 publications

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“…In the future, tests with these 3D FE-I4 prototypes at even higher fluences are planned. In parallel, studies with small-pitch 3D pixel sensors connected to the analogue ROC4SENS readout chip with 50×50 µm 2 pixel size are on-going [20]. First results up to 3×10 15 n eq /cm 2 are consistent with this study.…”

Section: Discussionsupporting

confidence: 82%

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Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²

et al. 2018

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A : Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50×50 and 25×100 µm 2 connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of 3 × 10 16 n eq /cm 2 , beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50×50 µm 2 devices has been measured in the laboratory and beam tests at CERN SPS. A high charge collected and a high hit efficiency of 98% were found up to the highest fluence. The bias voltage to reach the target efficiency of 97% at perpendicular beam incidence was found to be about 100 V at 1.4 × 10 16 n eq /cm 2 and 150 V at 2.8 × 10 16 n eq /cm 2 , significantly lower than for the previous IBL 3D generation with larger inter-electrode distance and than for planar sensors. The power dissipation at -25 • C and 1.4 × 10 16 n eq /cm 2 was found to be 13 mW/cm 2 . Hence, 3D pixel detectors demonstrated superior radiation hardness and were chosen as the baseline for the inner layer of the ATLAS HL-LHC pixel detector upgrade. K: Particle tracking detectors, HL-LHC upgrade, 3D silicon pixel detectors, Radiationhard detectors A X P : 1805.10208

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Section: Discussionsupporting

confidence: 82%

“…However, at the time of this study, it has not yet been available. Hence, first small-pitch 3D sensor prototypes have been produced with the option to connect them to the existing FE-I4 and ROC4SENS [20] readout chips.…”

Section: Introductionmentioning

confidence: 99%

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²

et al. 2018

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“…This study focuses on 3D technology, which has been demonstrated to be able to work under such extreme conditions [3]. Its main characteristic is the arrangement of electrodes as columns perpendicular to the sensor surface (figure 1).…”

Section: D Pixel Sensors For the Inner Trackermentioning

confidence: 99%

Test beam characterization of irradiated 3D pixel sensors

et al. 2020

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Due to the large expected instantaneous luminosity, the future HL-LHC upgrade sets strong requirements on the radiation hardness of the CMS detector Inner Tracker. Sensors based on 3D pixel technology, with its superior radiation tolerance, comply with these extreme conditions. A full study and characterization of pixelated 3D sensors fabricated by FBK is presented here. The sensors were bumpbonded to RD53A readout chips and measured at several CERN SPS test beams. Results on charge collection and efficiency, for both irradiated and non-irradiated samples, are presented. Two main studies are described: in the first the behaviour of the sensor is qualified as a function of irradiation, while kept under identical conditions; in the second the response is measured under typical operating conditions.

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“…3D sensors have already seen use in the insertable barrel pixel layer in the ATLAS inner tracker, and are included in the inner layers of both CMS and ATLAS Phase-II upgrade designs [2,3]. Current research in 3D sensors is focusing on small-cell sensors to meet future requirements for finer granularity in vertexing detectors, and to improve the understanding signal formation and properties for different particle track angles especially in highly-irradiated sensors [17,18,19].…”

Section: D Sensorsmentioning

confidence: 99%

“…a) Left: Schematic cross-section of a small-cell 3D sensor[19], b) right: Hit efficiency as function of bias voltage for an irradiated 3D sensor[17].…”

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confidence: 99%

Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities

Ott¹

2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

Cited by 6 publications

References 7 publications

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²

Test beam characterization of irradiated 3D pixel sensors

Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities

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Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

Cited by 6 publications

References 7 publications

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×1016 neq/cm2

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×1016 neq/cm2

Test beam characterization of irradiated 3D pixel sensors

Radiation-tolerant Silicon Detectors for the LHC Phase-II Upgrade and Beyond: Review of RD50 Activities

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Product

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Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²

Radiation hardness of small-pitch 3D pixel sensors up to a fluence of 3×10¹⁶ n_eq/cm²