Study of structural and optical properties of Sb doped ZnO thin films deposited by spin coating method

Undoped and Ag-doped ZnO thin films with different silver concentrations (0, 1, 3, and 7 wt%) were synthesized by sol-gel method and deposited onto glass substrate by dip-coating technique. Zinc acetate dehydrate and silver nitrate were used as starting materials. 2-Methoxyethanol and ethanolamine were used as solvent and stabilizer. Characterization by X-ray diffraction has revealed that the undoped and Ag-doped ZnO are polycrystalline, and have the wurtzite hexagonal structure with a preferred orientation along c-axis. The nanometric size (27-34 nm) of ZnO crystallites varies with the concentration of Ag. The surface morphology analysis, by atomic force microscopy and scanning electron microscopy, depicts a homogeneous dispersion of ZnO crystallites in the form of randomly spread wrinkles-like formation. The Raman spectroscopy confirms the Ag incorporation in the ZnO lattice. All films exhibit a transmittance greater than 75% in the visible region, and a sharp absorption band at 325 nm corresponding to the fundamental absorption edge. The room-temperature photoluminescence spectra of the prepared thin films display a strong ultraviolet band at 380 nm originated from excitons recombination, and four bands in the visible region at 430 nm (violet), 460 nm, 480 nm (blue) and 530 nm (green) from created defect levels in the band gap. These synthesized materials may be potential candidates in the manufacture of devices using short wavelengths.

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“…The crystallite size of undoped and Ag-doped ZnO thin films were estimated using Scherrer's formula [29,30]:…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

Fabrication and Characterization of Highly Textured Thin Films of Undoped and Ag-Doped ZnO

et al. 2019

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“…Various techniques such as pulsed laser deposition (PLD) 8, 9, 14, molecular beam epitaxy (MBE) 10, metallorganic chemical vapor deposition (MOCVD) 11, 15, 16, RF magnetron sputtering 12, 17, and sol–gel 13, 18 had been used to prepare Sb‐doped ZnO thin films. Among these techniques, PLD seems to be the most attractive since it can offer the potential of growing high‐quality thin films at relatively lower substrate temperature than other techniques.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of undoped and Sb‐doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

Zhu

Zhao

et al. 2011

Physica Status Solidi (a)

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Undoped and 0.56 at.% Sb‐doped ZnO thin films were prepared by pulsed laser deposition (PLD) under vacuum and an oxygen pressure of 0.2 Pa with sintered ceramic as targets. The effects of Sb doping and deposition atmosphere on structure and optical–electrical properties of the films were studied by X‐ray diffraction (XRD), scanning probe microscopy (SPM), Hall Effect measurement, transmittance spectra, and photoluminescence (PL) spectra. The results showed that undoped and Sb‐doped films deposited under vacuum had better crystallinity, higher carrier concentration, lower bandgap (Eg), and single violet emission as compared with the films deposited in an oxygen pressure of 0.2 Pa. Compared with undoped ZnO film, Sb‐doped ZnO film had higher carrier concentration and almost uniform Eg in both atmospheres, and it exhibited obviously improved crystallinity and green emission under an oxygen pressure of 0.2 Pa. The results implied that the deposition atmosphere strongly affected the growth kinetics of the films and intrinsic defect in the films, and Sb doping seemed also to affect the growth kinetics of the films under certain conditions and introduced SbZn defects and possibly SbZn‐2VZn defects, thus the structure and optical–electrical properties of the films were modified by the deposition atmosphere and Sb doping.

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“…The calculated grain size was 38.2 nm. The lattice constant "c" for the ZnO nanostructures was calculated using Bragg's law (Benelmadjat et al, 2010):…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of a single-bridge nanorod between microgap electrodes

Humayun

Kashif

Hashim

2014

Microelectronics International

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Purpose -The purpose of this study was to investigate the performance of a single-bridge ZnO nanorod as a photodetector. Design/methodology/approach -The fabrication of the design sensor with ϳ6-m gap Schottky contacts and bridging of the ZnO nanorod were based on conventional photolithography and wet-etching technique. Prior to bridging, the ZnO nanorods were grown by the hydrothermal process. The 0.35 M seed solution was prepared by dissolving zinc acetate dihydrate in 2-methoxyethanol, and monoethanolamine, which acts as a stabilizer, was added drop-wise. Before starting the solution deposition, and oxide, titanium (Ti) and gold (Au) layer deposition, p-type (100) silicon substrate was cleaned with Radio Corporation of America (RCA1) and RCA2, followed by dipping in diluted hydrofluoric acid. The aged solution was dropped onto the surface of the Au microgap structure, using a spin coater at a spinning speed of 3,000 rpm for 45 seconds, and then dried at 300°C for 15 minutes, followed by annealing at 400°C for 1 hour. The hydrothermal growth was carried out in an aqueous solution of zinc nitrate hexahydrate (0.025 M) and hexamethyltetramine (0.025 M). Findings -In this study, ZnO nanorods were grown on a SiO 2 substrate by the hydrothermal method. Microgap electrodes with ϳ6-m spacing were achieved by using the wet-etching process. After the growth process, an area-selective mask was utilized to reduce the number of rods between the nearby gap areas. The obtained single ZnO nanorod was tested for the UV-sensing application. The single ZnO nanorod photodetector exhibited a UV photoresponse, thereby indicating potential as a cost-effective UV detector. The response and recovery times of the fabricated device were 65 and 95 seconds, respectively. Structural analysis was captured using X-ray Diffraction (XRD), whereas surface morphology was determined using scanning electron microscopy. Originality/value -This paper demonstrates the effect of UV photon on a single-bridge ZnO nanorod between microgap electrodes.

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Study of structural and optical properties of Sb doped ZnO thin films deposited by spin coating method

Cited by 25 publications

References 18 publications

Fabrication and Characterization of Highly Textured Thin Films of Undoped and Ag-Doped ZnO

Fabrication and Characterization of Highly Textured Thin Films of Undoped and Ag-Doped ZnO

Characteristics of undoped and Sb‐doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

Fabrication and characterization of a single-bridge nanorod between microgap electrodes

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