Study of Structural, Electrical and Optical Properties of (200)-Oriented CdTe Thin Films Depending on the Post-deposition Low Temperature

Hasani, Ebrahim; Habashi, Lida Babazadeh; Kamalian, Monir; Arashti, Maryam Gholizadeh

doi:10.1007/s11664-020-08084-z

Cited by 4 publications

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“…TE deposition has developed as an attractive technique for the growth of high-quality thin films on substrates due to the direct-line propagation of evaporated nanoparticles (NPs) from the target to the substrate, the high rate of deposition with low impurity levels, the low tendency to oxidize in the deposited layer, and the low cost of preparation (Nassar et al 2016). The physical properties of CdTe thin films were improved by changing the deposition parameters, such as the growth rate, film thickness, deposition angle, substrate properties and substrate temperature during the deposition process or postdeposition treatment (Sestak et al 2011, Spalatu et al 2015, Chander and Dhaka 2015b, Hasani and Raoufi 2018a, Lai et al 2019, Hasani et al 2020, 2021. Thermal annealing in air, vacuum and gas (N2, H2, Ar, etc) as well as treatment with CdCl 2 and pressure can also improve the physical properties of CdTe films.…”

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confidence: 99%

Comprehensive study of physical properties of cadmium telluride thin films: effect of post-deposition high annealing temperature

Hasani¹,

Raoufi²

2021

Semicond. Sci. Technol.

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Thin films of cadmium telluride (CdTe) with a thickness of 550 nm were prepared using the thermal evaporation method. The resulting films were annealed in air atmosphere at 200 °C, 300 °C, 400 °C and 500 °C. The annealed films were subjected to x-ray diffraction (XRD), micro-Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy and transverse current–voltage (I–V) test analyses to investigate the structural, surface morphological, optical and electrical properties of films, respectively. The XRD patterns reveal the zinc blende structure of the pristine and treated film with the preferred (111) orientation. In addition, the crystallite size increases with the rise in annealing temperature. The Raman spectra reveal a redshift with annealing as well as the formation of Te precipitates in CdTe films. The SEM images show the uniformity and homogeneity of the as-prepared films. The AFM studies show an increase in the surface roughness of the annealed films. The optical energy band gap is found to decrease with the annealing temperature. The I–V measurement indicates the ohmic behavior of CdTe films. The experimental results indicate that the annealed CdTe thin films at 400 °C have optimized physical properties for solar cell applications as an absorber layer.

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