2005
DOI: 10.1007/s10854-005-4953-x
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Study of surface morphology and optical properties of Nb2O5 thin films with annealing

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Cited by 45 publications
(46 citation statements)
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“…Using this method, from the spectrum we calculated the band gap of Nb 2 O 5 to be 3.8 eV (325 nm). The value of the band gap energy is shorter than that in the literature, where the bulk band gap is 4.87 eV [15]. We have no explanation for the discrepancy between the bulk value and the band gap measured in this study.…”
Section: Tem and Hrtem Measurementscontrasting
confidence: 87%
“…Using this method, from the spectrum we calculated the band gap of Nb 2 O 5 to be 3.8 eV (325 nm). The value of the band gap energy is shorter than that in the literature, where the bulk band gap is 4.87 eV [15]. We have no explanation for the discrepancy between the bulk value and the band gap measured in this study.…”
Section: Tem and Hrtem Measurementscontrasting
confidence: 87%
“…In recent years, Nb 2 O 5 films have attained considerable interest for electrochromic (EC) devices because of their crystal-structure-dependent electrochromic properties. The optical and structural properties of Nb 2 O 5 films depend strongly on stoichiometry, crystal structure, and surface roughness [1][2][3][4][5][6][7][8]. Therefore, it is necessary to research the role of deposition and post-deposition parameters on the film properties.…”
Section: Introductionmentioning
confidence: 99%
“…A liquid electrolyte (Iodolyte AN-50, Solaronix) was injected into the hole on the backside of the counter As the thickness of the initial Nb thin films increased, characteristic peaks of orthorhombic Nb 2 O 5 appeared and their intensities increased. As a typical n-type, wide bandgap semiconductor (E g =3.4 eV), Nb 2 O 5 is the most thermodynamically stable phase among the various niobium oxides [13]. This indicates that the post-annealing treatment converts metallic Nb to crystalline Nb 2 O 5 well, despite volume expansion due to Nb-O bonding.…”
Section: Methodsmentioning
confidence: 99%